MMDF2C03HDR2 ON Semiconductor, MMDF2C03HDR2 Datasheet

MMDF2C03HDR2

Manufacturer Part Number

MMDF2C03HDR2

Description

MOSFET N/P-CH 30V 3A 8-SOIC

Manufacturer

ON Semiconductor

Datasheet

1.MMDF2C03HDR2.pdf (10 pages)

Specifications of MMDF2C03HDR2

Fet Type

N and P-Channel

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

70 mOhm @ 3A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

4.1A, 3A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

16nC @ 10V

Input Capacitance (ciss) @ Vds

630pF @ 24V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Configuration

Dual Dual Drain

Transistor Polarity

N and P-Channel

Resistance Drain-source Rds (on)

0.07 Ohms

Forward Transconductance Gfs (max / Min)

3.6 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

4.1 A, - 3 A

Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Fall Time

23 ns, 194 ns

Minimum Operating Temperature

- 55 C

Rise Time

65 ns, 18 ns

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

MMDF2C03HDR2OSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

MMDF2C03HDR2G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 10
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MMDF2C03HD

Power MOSFET

2 Amps, 30 Volts

Complementary SO−8, Dual

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain-to-source diode has a very low reverse recovery time.

MiniMOSt devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc-dc converters, and power management in portable

and battery powered products such as computers, printers, cellular and

cordless phones. They can also be used for low voltage motor controls

in mass storage products such as disk drives and tape drives. The

avalanche energy is specified to eliminate the guesswork in designs

where inductive loads are switched and offer additional safety margin

against unexpected voltage transients.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Negative signs for P−Channel device omitted for clarity.

2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with

February, 2006 − Rev. 7

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Drain Current − Continuous

Drain Current

Operating and Storage Temperature Range

Total Power Dissipation @ T

Thermal Resistance, Junction−to−Ambient

(Note 2)

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

Max Lead Temperature for Soldering, 0.0625″

from case. Time in Solder Bath is 10 seconds

These miniature surface mount MOSFETs feature ultra low R

Ultra Low R

Logic Level Gate Drive − Can Be Driven by Logic ICs

Miniature SO-8 Surface Mount Package − Saves Board Space

Diode Is Characterized for Use In Bridge Circuits

Diode Exhibits High Speed, With Soft Recovery

Avalanche Energy Specified

Mounting Information for SO-8 Package Provided

Pb−Free Package is Available

L = 8.0 mH, R

L = 18 mH, R

one die operating, 10 sec. max.

DSS

= 30 V, V

Specified at Elevated Temperature

− Pulsed

DS(on)

= 25 W)

= 5.0 V, Peak I

Rating

= 25°C

Provides Higher Efficiency and Extends Battery Life

= 25°C unless otherwise noted) (Note 1)

= 25°C (Note 2)

Preferred Device

N−Channel

P−Channel

= 9.0 Apk,

= 6.0 Apk,

Symbol

, T

DSS

qJA

stg

− 55 to 150

Value

± 20

62.5

324

260

4.1

3.0

2.0

DS(on)

°C/W

Unit

Vdc

°C

†For information on tape and reel specifications,

Preferred devices are recommended choices for future use

and best overall value.

MMDF2C03HDR2

MMDF2C03HDR2G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

N−Source

P−Source

DS(on)

(Note: Microdot may be in either location)

DS(on)

Device

N−Gate

P−Gate

2 AMPERES, 30 VOLTS

ORDERING INFORMATION

N−Channel

D2C03 = Device Code

http://onsemi.com

= 200 mW (P-Channel)

PIN ASSIGNMENT

= 70 mW (N-Channel)

CASE 751

STYLE 14

= Assembly Location

= Year

= Work Week

= Pb−Free Package

SO−8

(Pb−Free)

Package

SO−8

Publication Order Number:

2500 Tape & Reel

MMDF2C03HD/D

P−Channel

N−Drain

P−Drain

MARKING

DIAGRAM

Shipping

AYWWG

D2C03

†

Related parts for MMDF2C03HDR2

MMDF2C03HDR2 Summary of contents

Page 1

... AS 324 324 MMDF2C03HDR2 °C T 260 MMDF2C03HDR2G L †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage = 250 mAdc Vdc Zero Gate Voltage Drain Current ( Vdc Vdc ± 20 Vdc, V Gate−Body Leakage ...

Page 3

ELECTRICAL CHARACTERISTICS − Characteristic SOURCE−DRAIN DIODE CHARACTERISTICS (T Forward Voltage (Note 3.0 Adc 2.0 Adc Reverse Recovery Time (I F Reverse Recovery Storage Charge 6. Negative signs for P−Channel device omitted ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS N−Channel 25°C J 0.4 0.3 0.2 0 GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 3. On−Resistance versus Gate−To−Source Voltage 0.08 T ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS N−Channel 100 125° 100° DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 6. Drain−To−Source Leakage Current versus Voltage Switching behavior is most easily modeled ...

Page 6

N−Channel 1200 iss 1000 800 600 C rss 400 200 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance ...

Page 7

... RR Compared to ON Semiconductor standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter t reverse recovery characteristic. The softness advantage of the high cell density diode means they can be forced through ...

Page 8

The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T ...

Page 9

N−Channel 350 300 250 200 150 100 100 T , STARTING JUNCTION TEMPERATURE (°C) J Figure 13. Maximum Avalanche Energy versus Starting Junction Temperature TYPICAL ELECTRICAL CHARACTERISTICS 0.5 0.2 0.1 0.1 ...

Page 10

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MiniMOS is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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