MMDF2C03HDR2 ON Semiconductor, MMDF2C03HDR2 Datasheet - Page 9

• Manufacturer Part Number: MMDF2C03HDR2
• Description: MOSFET N/P-CH 30V 3A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of MMDF2C03HDR2

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.1A, 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 630pF @ 24V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Forward Transconductance Gfs (max / Min): 3.6 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.1 A, - 3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 23 ns, 194 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 65 ns, 18 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MMDF2C03HDR2OSTR

350
300
250
200
150
100
50
0
0.001
25
0.01
0.1
Figure 13. Maximum Avalanche Energy versus
10
1.0E−05
1
T
J
Starting Junction Temperature
50
, STARTING JUNCTION TEMPERATURE (°C)
D = 0.5
0.02
0.05
0.01
0.1
SINGLE PULSE
0.2
1.0E−04
N−Channel
75
TYPICAL ELECTRICAL CHARACTERISTICS
1.0E−03
Figure 15. Diode Reverse Recovery Waveform
100
I
S
t
Figure 14. Thermal Response
p
125
1.0E−02
http://onsemi.com
I
MMDF2C03HD
D
= 9 A
di/dt
t
a
150
9
t, TIME (s)
Chip
t
rr
1.0E−01
t
b
I
S
350
300
250
200
150
100
0.25 I
50
0.0175 W
0.0154 F
0
25
Figure 13. Maximum Avalanche Energy versus
S
1.0E+00
0.0854 F
0.0710 W
T
J
Starting Junction Temperature
, STARTING JUNCTION TEMPERATURE (°C)
50
Normalized to qja at 10s.
TIME
0.2706 W
0.3074 F
P−Channel
75
1.0E+01
1.7891 F
0.5776 W
100
1.0E+02
0.7086 W
107.55 F
125
Ambient
I
D
1.0E+03
= 6 A
150