NTTD1P02R2 ON Semiconductor, NTTD1P02R2 Datasheet

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NTTD1P02R2

Manufacturer Part Number
NTTD1P02R2
Description
MOSFET P-CHAN DUAL 20V 8MICRO
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTTD1P02R2

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
160 mOhm @ 1.45A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.45A
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Input Capacitance (ciss) @ Vds
265pF @ 16V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
NTTD1P02R2OS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTTD1P02R2
Manufacturer:
OSRAM
Quantity:
4 055
NTTD1P02R2
Power MOSFET
−1.45 Amps, −20 Volts
P−Channel Enhancement Mode
Dual Micro8t Package
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR−4 or G−10 PCB, Steady State.
2. Mounted onto a 2” square FR−4 Board
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance −
Thermal Resistance −
Operating and Storage
Single Pulse Drain−to−Source Avalanche
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
Ultra Low R
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Dual Micro8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Micro8 Mounting Information Provided
Pb−Free Package is Available
Power Management in Portable and Battery−Powered Products,
(1 in sq, 2 oz Cu 0.06″ thick single sided), Steady State.
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current (Note 3)
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current (Note 3)
Temperature Range
Energy − Starting T
(V
Peak I
R
G
DD
= 25 W)
= −20 Vdc, V
L
= −3.5 Apk, L = 5.6 mH,
DS(on)
Rating
GS
J
(T
= 25°C
= −4.5 Vdc,
J
= 25°C unless otherwise noted)
A
A
= 25°C
= 25°C
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Symbol
T
V
R
R
J
EAS
V
I
I
P
P
, T
T
DSS
I
I
DM
I
I
DM
qJA
qJA
GS
D
D
D
D
D
D
L
stg
−55 to
Value
−1.45
−1.15
−2.04
−1.64
"8.0
+150
0.50
−20
250
−10
125
−16
260
1.0
35
1
°C/W
°C/W
Unit
mJ
°C
°C
W
W
V
V
A
A
A
A
A
A
†For information on tape and reel specifications,
NTTD1P02R2
NTTD1P02R2G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
CASE 846A
Device
8
(Note: Microdot may be in either location)
STYLE 2
Micro8
160 mW @ V
BC
WW
G
ORDERING INFORMATION
−1.45 AMPERES
G
1
http://onsemi.com
−20 VOLTS
Dual P−Channel
MARKING DIAGRAM &
= Specific Device Code
= Work Week
= Pb−Free Package
(Pb−Free)
Package
Micro8
Micro8
PIN ASSIGNMENT
D
1
Publication Order Number:
8
D1 D1 D2 D2
S1 G1 S2 G2
GS
S
WW
BCG
4000/Tape & Reel
4000/Tape & Reel
G
= −4.5
NTTD1P02R2/D
Shipping

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NTTD1P02R2 Summary of contents

Page 1

... MARKING DIAGRAM & PIN ASSIGNMENT BCG Micro8 G CASE 846A STYLE Specific Device Code WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION † Device Package Shipping Micro8 4000/Tape & Reel Micro8 4000/Tape & Reel (Pb−Free) Publication Order Number: NTTD1P02R2/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc −250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc −20 Vdc 25° ...

Page 3

V −2.5 V −2.9 V −2.3 V −3.1 V −3.3 V −3.7 V −4 − 0.25 0.5 0.75 1 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.4 0.3 ...

Page 4

iss 600 C rss 400 200 −V − GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 V = −16 ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 1 SINGLE PULSE 0.1 1.0E−05 1.0E−04 1.0E−03 P (pk DUTY CYCLE 1.0E−02 1.0E−01 1.0E+00 t, TIME (s) Figure 13. ...

Page 6

... SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 5.28 0.208 mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTTD1P02R2/D MAX 0.043 0.006 0.016 0.009 0.122 0.122 0.028 0.199 ...

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