NTTD1P02R2 ON Semiconductor, NTTD1P02R2 Datasheet - Page 4

• Manufacturer Part Number: NTTD1P02R2
• Description: MOSFET P-CHAN DUAL 20V 8MICRO
• Manufacturer: ON Semiconductor

Specifications of NTTD1P02R2

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1.45A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.45A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 265pF @ 16V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTTD1P02R2OS

100
800
600
400
200
10
0.01
100
1
0.1
0
10
1
1
10
0.1
Figure 9. Resistive Switching Time Variation
t
V
I
V
d (on)
C
t
V
SINGLE PULSE
T
C
D
d (off)
DD
GS
C
Figure 11. Maximum Rated Forward Biased
rss
GS
iss
= −1.45 A
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
t
= 25°C
t
f
r
= −16 V
= −4.5 V
V
= 8 V
V
DS
5
DS
Figure 7. Capacitance Variation
R
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
G,
= 0 V
−V
versus Gate Resistance
GATE RESISTANCE (OHMS)
R
THERMAL LIMIT
PACKAGE LIMIT
GS
DS(on)
Safe Operating Area
0
VOLTAGE (VOLTS)
1
−V
V
GS
DS
LIMIT
= 0 V
10
5
10
10
T
100 ms
1 ms
10 ms
dc
J
15
= 25°C
http://onsemi.com
C
C
C
oss
rss
iss
100
20
100
4
5
4
3
2
1
0
0
Drain−to−Source Voltage versus Total Charge
1.6
1.2
0.8
0.4
0
Figure 12. Diode Reverse Recovery Waveform
0.4
Q1
I
S
1
−V
V
T
Figure 8. Gate−to−Source and
Q
GS
J
SD,
= 25°C
Figure 10. Diode Forward Voltage
g
0.5
, TOTAL GATE CHARGE (nC)
= 0 V
SOURCE−TO−DRAIN VOLTAGE (VOLTS)
t
p
2
−V
QT
Q2
0.6
DS
versus Current
di/dt
3
t
a
0.7
t
rr
t
b
I
4
S
0.25 I
I
T
−V
D
0.8
J
= −1.45 A
= 25°C
GS
S
5
0.9
TIME
6
20
18
16
14
12
10
8
6
4
2
0
1