NTMC1300R2 ON Semiconductor, NTMC1300R2 Datasheet - Page 3

• Manufacturer Part Number: NTMC1300R2
• Description: MOSFET N/P-CH DUAL 3A 30V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMC1300R2

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.2A, 1.8A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTMC1300R2OS

0.175
0.125
0.075
0.025
0.20
0.15
0.10
0.05
20
16
12
12
8
4
0
9
6
3
0
1
0
2
V
DS
V
1
V
Figure 1. On−Region Characteristics
DS
V
GS
≥ 10 V
2
3
GS
4.6 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance versus
4.8 V
5.2 V
6.5 V
8.0 V
10 V
4
Gate−To−Source Voltage
3
3
T
J
N−Channel
= −55°C
5
4
4
5
6
V
TYPICAL ELECTRICAL CHARACTERISTICS
T
5
GS
J
6
= 25°C
T
= 2.6 V
T
J
7
J
= 25°C
= 100°C
7
6
I
T
D
8
J
= 3.0 A
8
= 25°C
7
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4.2 V
4.0 V
3.6 V
3.2 V
2.8 V
9
9
10
8
10
3
0.225
0.175
0.125
0.075
0.25
0.20
0.15
0.10
0.05
20
16
12
12
8
4
0
9
6
3
0
1
0
2
−10 V
V
DS
−V
−V
−V
1
Figure 2. On−Region Characteristics
3
≥ −10 V
DS
2
GS
GS
Figure 4. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. On−Resistance versus
, GATE−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
−8.0 V
Gate−To−Source Voltage
4
−6.5 V
3
−5.2 V
3
−4.8 V
T
J
P−Channel
5
= 25°C
4
4
T
J
5
6
= −55°C
V
T
GS
5
J
6
= 25°C
= −2.6 V
7
T
J
7
= 100°C
6
I
T
D
8
J
= −3.0 A
= 25°C
8
7
−4.2 V
−4.0 V
−3.6 V
−3.2 V
−2.8 V
−4.6 V
9
9
10
10
8