NTMC1300R2 ON Semiconductor, NTMC1300R2 Datasheet - Page 4

• Manufacturer Part Number: NTMC1300R2
• Description: MOSFET N/P-CH DUAL 3A 30V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMC1300R2

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.2A, 1.8A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTMC1300R2OS

1000
100
0.20
0.16
0.12
0.08
0.04
10
1.6
1.4
1.2
1.0
0.8
0.6
1
0
−50
2
V
Figure 7. On−Resistance versus Drain Current
GS
V
T
−25
Figure 11. Drain−To−Source Leakage
I
V
DS
Figure 9. On−Resistance Variation with
4
D
= 0 V
J
GS
= 25°C
= 3.0 A
5
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 10 V
T
J
6
, JUNCTION TEMPERATURE (°C)
Current versus Voltage
I
0
D
, DRAIN CURRENT (AMPS)
10
8
and Gate Voltage
25
Temperature
N−Channel
10
T
T
J
J
15
= 100°C
= 150°C
50
TYPICAL ELECTRICAL CHARACTERISTICS
12
75
V
20
GS
14
= 4.5 V
100
V
16
GS
25
= 10 V
125
http://onsemi.com
18
30
20
150
4
1000
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
100
1.6
1.4
1.2
1.0
0.8
0.6
10
−50
1
2
0
Figure 8. On−Resistance versus Drain Current
T
V
J
GS
Figure 10. On−Resistance Variation with
−25
I
V
−V
= 25°C
D
Figure 12. Drain−To−Source Leakage
GS
4
= −3.0 A
= 0 V
DS
5
= −10 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
J,
−I
0
JUNCTION TEMPERATURE (°C)
6
Current versus Voltage
D,
DRAIN CURRENT (AMPS)
and Gate Voltage
10
25
8
Temperature
P−Channel
T
T
10
J
50
J
15
= 150°C
= 100°C
V
GS
75
12
= −4.5 V
20
V
100
GS
14
= −10 V
25
125
16
150
18
30