NTMD3P03R2G ON Semiconductor, NTMD3P03R2G Datasheet - Page 3

• Manufacturer Part Number: NTMD3P03R2G
• Description: MOSFET PWR P-CHAN DUAL 30V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD3P03R2G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.34A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 24V
• Power - Max: 730mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.085 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 2.34 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMD3P03R2GOS

0.25
0.15
0.05
0.2
0.1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
6
5
4
3
2
1
0
0
1
3
0
Figure 5. On−Resistance vs. Drain Current and
T
V
Figure 3. On−Resistance vs. Gate−to−Source
J
GS
T
−V
= 25°C
V
−V
J
0.25
GS
= −6 V
= 25°C
Figure 1. On−Region Characteristics
DS
V
GS
GS
= −8 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
4
= −10 V
0.5
−I
D
, DRAIN CURRENT (AMPS)
V
0.75
GS
Gate Voltage
V
3
5
V
GS
= −5 V
V
Voltage
GS
GS
= −4.5 V
V
= −10 V
1
GS
= −2.6 V
V
TYPICAL ELECTRICAL CHARACTERISTICS
GS
= −4.8 V
1.25
4
6
= −2.8 V
V
GS
V
GS
= −4.6 V
1.5
V
V
I
T
GS
D
= −4.4 V
GS
V
J
V
= −3.05 A
GS
= 25°C
7
5
GS
= −3.6 V
= −3.2 V
1.75
= −3 V
http://onsemi.com
= −4 V
2
8
6
3
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.6
1.4
1.2
0.8
0.6
1
6
5
4
3
2
1
0
0
−50
1
2
Figure 4. On−Resistance vs. Gate−to−Source
V
I
V
−V
DS
−V
D
−25
Figure 6. On Resistance Variation with
GS
= −3.05 A
GS
GS
> = −10 V
Figure 2. Transfer Characteristics
= −10 V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
T
, GATE−TO−SOURCE VOLTAGE (VOLTS)
3
J
, JUNCTION TEMPERATURE (°C)
0
2
T
J
= 25°C
T
25
J
Temperature
4
= 100°C
Voltage
50
3
T
5
75
J
= −55°C
100
4
I
T
D
J
= −1.5 A
6
= 25°C
125
150
5
7