NTMD3P03R2G ON Semiconductor, NTMD3P03R2G Datasheet - Page 4

• Manufacturer Part Number: NTMD3P03R2G
• Description: MOSFET PWR P-CHAN DUAL 30V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD3P03R2G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.34A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 24V
• Power - Max: 730mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.085 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 2.34 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMD3P03R2GOS

10000
1000
1000
100
100
10
12
10
10
8
6
4
2
0
6
0
1
V
V
Q
Figure 11. Resistive Switching Time Variation
V
I
V
Figure 7. Drain−to−Source Leakage Current
D
DS
GS
1
Drain−to−Source Voltage vs. Total Charge
DS
GS
−V
= −1.5 A
= 0 V
2
= −24 V
= −4.5 V
DS
10
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 9. Gate−to−Source and
Q
4
g
R
, TOTAL GATE CHARGE (nC)
G
Q
vs. Gate Resistance
, GATE RESISTANCE (W)
14
2
6
vs. Voltage
T
T
J
J
= 150°C
= 125°C
Q
10
18
8
T
t
t
r
f
10
22
I
T
D
J
12
= −3.05 A
= 25°C
26
V
http://onsemi.com
GS
14
t
t
d(on)
d(off)
100
30
16
30
25
20
15
10
5
0
4
1200
1000
1000
800
600
400
200
100
2.5
1.5
0.5
10
0
1
3
2
1
0
10
0.2
1
Figure 10. Resistive Switching Time Variation
Figure 12. Diode Forward Voltage vs. Current
T
V
I
V
V
V
T
C
C
D
J
−V
DS
DS
GS
J
GS
−V
iss
rss
= 25°C
= −3.05 A
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
GS
= 25°C
= 0 V
5
= −24 V
= −10 V
SD
= 0 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.4
Figure 8. Capacitance Variation
0
R
G
vs. Gate Resistance
V
, GATE RESISTANCE (W)
GS
VOLTAGE (VOLTS)
= 0 V
5
−V
0.6
DS
t
t
d(off)
d(on)
t
f
10
C
10
C
C
iss
oss
rss
t
r
0.8
15
20
1
25
100
30
1.2