NTJD2152PT4 ON Semiconductor, NTJD2152PT4 Datasheet - Page 2

• Manufacturer Part Number: NTJD2152PT4
• Description: MOSFET P-CH 8V DUAL ESD SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJD2152PT4

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 775mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 225pF @ 8V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

2. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Parameter
V(BR)DSS/
(T
V
V
Symbol
Q
V
GS(TH)
R
J
Q
td
(BR)DSS
td
C
C
=25°C unless otherwise stated)
GS(TH)
I
I
C
G(TOT)
Q
Q
DS(on)
V
g
G(TH)
DSS
GSS
(OFF)
t
T
OSS
RSS
(ON)
RR
ISS
tr
FS
GD
tf
SD
GS
J
/T
J
V
GS
V
V
V
http://onsemi.com
I
V
V
V
GS
V
S
GS
GS
V
V
V
V
V
GS
GS
GS
= −4.0 V, I
I
GS
= −0.23 A
GS
D
GS
DS
GS
GS
= 0 V, dI
= −4.5 V, V
= −4.5 V, V
= −0.5 A, R
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
= 0 V,
Test Condition
= V
= 0 V, V
= 0 V, V
= 0 V, f = 1.0 MHz,
= 0 V, I
V
I
I
S
DS
D
DS
2
= −0.77 A
= −0.6 A
= −8.0 V
, ID = −250 mA
S
D
/dt = 100 A/ms,
D
GS
= −0.57 A
DS
= −250 mA
D
D
DS
DD
D
G
= −0.57 A
= −0.48 A
= −6.4 V
= ±8.0 V
= −0.20 A
= 8.0 W
T
= −5.0 V,
= −4.0 V,
T
J
J
= 125°C
= 25°C
−0.45
−8.0
Min
−10.5
−0.83
−6.0
0.22
0.32
0.51
0.76
0.63
Typ
160
2.2
2.0
2.2
0.1
0.5
0.5
38
28
13
23
50
36
78
Max
−1.0
0.46
225
1.0
0.3
0.9
4.0
1.1
10
55
40
mV/ °C
mV/°C
Unit
mA
mA
nC
pF
ns
ns
W
V
V
S
V