NTJD2152PT4 ON Semiconductor, NTJD2152PT4 Datasheet - Page 4

• Manufacturer Part Number: NTJD2152PT4
• Description: MOSFET P-CH 8V DUAL ESD SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJD2152PT4

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 775mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 225pF @ 8V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

5
4
3
2
1
0
0
Q
GS
Drain−to−Source Voltage vs. Total Charge
0.4
Q
Figure 7. Gate−to−Source and
g
, TOTAL GATE CHARGE (nC)
Q
GD
0.8
TYPICAL PERFORMANCE CURVES
Q
G(TOT)
1.2
1.6
V
GS
I
T
D
J
= −0.6 A
2
= 25°C
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2.4
4
0.7
0.6
0.5
0.3
0.2
0.1
0.4
0
(T
Figure 8. Diode Forward Voltage vs. Current
0
J
= 25°C unless otherwise noted)
V
−V
GS
SD
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.2
T
J
0.4
= 150°C
0.6
T
J
= 25°C
0.8
1