NTLTD7900ZR2G ON Semiconductor, NTLTD7900ZR2G Datasheet

NTLTD7900ZR2G

Manufacturer Part Number

NTLTD7900ZR2G

Description

MOSFET PWR N-CHAN 9A 20V 8MICRO

Manufacturer

ON Semiconductor

Datasheet

1.NTLTD7900ZR2G.pdf (8 pages)

Specifications of NTLTD7900ZR2G

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

26 mOhm @ 6.5A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

18nC @ 4.5V

Input Capacitance (ciss) @ Vds

15pF @ 16V

Power - Max

1.5W

Mounting Type

Surface Mount

Package / Case

Micro-8 Leadless

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTLTD7900ZR2GOS
NTLTD7900ZR2GOS
NTLTD7900ZR2GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTLTD7900ZR2G

Manufacturer:

YINGDA

Quantity:

3 523

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NTLTD7900ZR2

Power MOSFET

9 A, 20 V, Logic Level, N- -Channel

Micro8™ Leadless

Zener diodes. These Zener diodes provide protection against ESD and

unexpected transients. These miniature surface mount MOSFETs

feature ultra low R

is designed for use in low voltage, high speed switching applications

where power efficiency is important. Typical applications are DC- -DC

converters, and power management in portable and battery powered

products such as computers, printers, cellular and cordless phones.

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to 1″ x 1″ FR--4 board.

October, 2009 - - Rev. 7

MAXIMUM RATINGS

Drain--to--Source Voltage

Gate--to--Source Voltage

Continuous Drain Current (Note 1)

Pulsed Drain Current

Continuous Source--Diode

Total Power Dissipation (Note 1)

Operating Junction and Storage

Thermal Resistance (Note 1)

This advanced Power MOSFET contains monolithic back- -to- -back

Battery Life

Pb- -Free Package is Available

Zener Protected Gates Provide Electrostatic Discharge Protection

Designed to Withstand 4000 V Human Body Model

Ultra Low R

Logic Level Gate Drive - - Can be Driven by Logic ICs

Micro8 Leadless Surface Mount Package - - Saves Board Space

DSS

(tp ≤ 10 ms)

Conduction (Note 1)

Temperature Range

Junction--to--Ambient

= 25°C

= 85°C

= 25°C

= 85°C

Specified at Elevated Temperature

Rating

DS(on)

Provides Higher Efficiency and Extends

and true logic level performance. This device

= 25°C unless otherwise noted)

Symbol

, T

DSS

θJA

stg

10 Sec

9.0

6.4

2.9

3.2

1.7

--55 to 150

±12

Steady

State

0.79

6.0

4.3

1.4

1.5

°C/W

Unit

°C

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Micro8 LEADLESS

N- -Channel

CASE 846C

2.4 kΩ

Drain

ORDERING INFORMATION

http://onsemi.com

DS(on)

PIN ASSIGNMENT

= 4.5 V, I

= 2.5 V, I

9 AMPERES

20 VOLTS

(Bottom View)

= Assembly Location

= Year

= Work Week

= Pb--Free Package

Drain

= 26 mΩ

= 31 mΩ

Publication Order Number:

MARKING DIAGRAM

= 6.5 A)

= 5.8 A)

N- -Channel

NTLTD7900ZR2/D

2.4 kΩ

AYWW

7900

Source 1

Gate 1

Source 2

Gate 2

Related parts for NTLTD7900ZR2G

NTLTD7900ZR2G Summary of contents

Page 1

NTLTD7900ZR2 Power MOSFET Logic Level, N- -Channel Micro8™ Leadless This advanced Power MOSFET contains monolithic back- -to- -back Zener diodes. These Zener diodes provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain--to--Source Breakdown Voltage (Note Vdc 250 mAdc Zero Gate Voltage Drain Current ( Vdc Vdc Vdc, V ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS GATE--TO--SOURCE VOLTAGE (V) GS Figure 1. Gate- -Current versus Gate- -Source Voltage 30 2 ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Δt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

T = 25° 6 TOTAL GATE CHARGE (nC) g Figure 7. Gate- -to- -Source 25° ...

Page 6

... SINGLE PULSE 0.01 10--4 10--3 ORDERING INFORMATION Device NTLTD7900ZR2 NTLTD7900ZR2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. P (pk) DUTY CYCLE 10--2 10-- TIME (seconds) Figure 13 ...

Page 7

... T NOTE DETAIL VIEW AA- -AA 1.23 0.40 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS Micro8 LEADLESS CASE 846C--01 ISSUE C SEATING T PLANE NOTE 0. 0.08 T SIDE VIEW ...

Page 8

... Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303--675--2175 or 800--344--3860 Toll Free USA/Canada Fax: 303--675--2176 or 800--344--3867 Toll Free USA/Canada Email: orderlit@onsemi ...

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