NTLTD7900ZR2G ON Semiconductor, NTLTD7900ZR2G Datasheet - Page 3

• Manufacturer Part Number: NTLTD7900ZR2G
• Description: MOSFET PWR N-CHAN 9A 20V 8MICRO
• Manufacturer: ON Semiconductor

Specifications of NTLTD7900ZR2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 15pF @ 16V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: Micro-8 Leadless
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTLTD7900ZR2GOS; NTLTD7900ZR2GOS; NTLTD7900ZR2GOSTR

30
24
18
12
8
6
4
2
0
6
0
0
0
Figure 1. Gate- -Current versus Gate- -Source
2.4 V
Figure 3. On- -Region Characteristics
V
3
V
GS
2.8 V
3.5 V
4.5 V
DS
10 V
2
, GATE--TO--SOURCE VOLTAGE (V)
, DRAIN--TO--SOURCE VOLTAGE (V)
6
4
Voltage
9
0.06
0.05
0.04
0.03
0.02
0.01
TYPICAL ELECTRICAL CHARACTERISTICS
0
Figure 5. On- -Resistance versus Drain Current
6
0
12
V
GS
8
15
6
= 1.2 V
2.2 V
2.0 V
1.8 V
1.6 V
1.4 V
http://onsemi.com
I
D
, DRAIN CURRENT (A)
18
10
12
3
10,000
1000
0.01
100
0.1
10
30
24
18
12
V
1
6
0
GS
18
0
0
= 2.5 V
Figure 2. Gate- -Current versus Gate- -Source
V
GS
= 4.5 V
0.4
V
V
Figure 4. Transfer Characteristics
GS
GS
24
3
, GATE--TO--SOURCE VOLTAGE (V)
, GATE--TO--SOURCE VOLTAGE (V)
T
C
0.8
= 125°C
30
T
6
C
Voltage
= 25°C
1.2
T
J
T
9
= 150°C
C
= --55°C
1.6
T
J
= 25°C
12
2.0
2.4
15