FDY100PZ Fairchild Semiconductor, FDY100PZ Datasheet - Page 4

• Manufacturer Part Number: FDY100PZ
• Description: MOSFET P-CH 20V 350MA SC-89
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDY100PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 100pF @ 10V
• Power - Max: 446mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.2 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 1 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.35 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 350mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDY100PZTR

Typical Characteristics
FDY100PZ Rev A
0.01
0.1
10
10
1
0.01
8
6
4
2
0
0.01
Figure 9. Maximum Safe Operating Area.
0.1
Figure 7. Gate Charge Characteristics.
0
0.0001
1
R
I
SINGLE PULSE
D
R
DS(ON)
= -0.35A
θJA
V
T
GS
D = 0.5
A
= 280
= 25
0.2
LIMIT
= -4.5V
0.1
0.05
0.02
0.5
o
o
0.01
C
C/W
0.1
-V
SINGLE PULSE
DS
, DRAIN-SOURCE VOLTAGE (V)
V
Q
0.001
DS
g
, GATE CHARGE (nC)
= -5V
1
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
-10V
1
DC
Figure 11. Transient Thermal Response Curve.
10s
1.5
1s
-15V
100ms
0.01
10ms
10
1ms
2
100µs
2.5
100
0.1
t
1
, TIME (sec)
150
125
100
10
75
50
25
0.0001
8
6
4
2
0
0
0
Figure 8. Capacitance Characteristics.
1
C
Figure 10. Single Pulse Maximum
rss
0.001
2
-V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.01
4
10
C
oss
t
1
, TIME (sec)
0.1
6
P(pk)
Duty Cycle, D = t
T
R
J
R
θJA
- T
θJA
(t) = r(t) * R
100
C
A
8
t
iss
1
=280 ° C/W
1
= P * R
t
2
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SINGLE PULSE
R
θJA
T
A
θJA
= 280° C/W
= 25° C
1
10
10
θJA
(t)
/ t
f = 1 MHz
V
2
GS
= 0 V
1000
100
12