FDN338P Fairchild Semiconductor, FDN338P Datasheet - Page 2

• Manufacturer Part Number: FDN338P
• Description: MOSFET P-CH 20V 1.6A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN338P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 115 mOhm @ 1.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 451pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.115 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.6 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN338PTR

Notes:
1.
Scale 1 : 1 on letter size paper
2.
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
DSS
GSSF
GSSR
D(on)
S
d(on)
r
d(off)
f
FS
BV
V
DS(on)
iss
oss
rss
GS(th)
g
gs
gd
SD
R
the drain pins. R
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
DSS
GS(th)
T
T
JA
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Drain–Source Breakdown Voltage V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
a) 250 C/W when mounted on a
0.02 in
Parameter
2
pad of 2 oz. copper.
(Note 2)
(Note 2)
CA
is determined by the user's board design.
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
T
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –250 A, Referenced to 25 C
= –250 A, Referenced to 25 C
A
= 25°C unless otherwise noted
= 0 V, I
= –16 V, V
= 8 V,
= –8 V,
= V
= –4.5 V,
= –2.5 V,
= –4.5 V, I
= –4.5 V,
= –5 V,
= –10 V,
= –10 V,
= –4.5 V,
= –10 V,
= –4.5 V
= 0 V, I
Test Conditions
GS
, I
D
D
= –250 A
S
= –250 A
D
= –0.42
V
b) 270°C/W when mounted on a
V
= –1.6 A, T
I
I
V
I
GS
DS
D
D
D
V
I
I
R
DS
D
D
minimum pad.
= –1.6 A
= –1.3 A
GS
GEN
= –1.6 A,
DS
= –1.6 A
= –1 A,
= 0 V
= 0 V
= 0 V
= 0 V,
= –5 V
= 6
(Note 2)
J
=125 C
Min
–0.4
–20
–5
Typ
–0.8
–0.7
–16
117
116
451
2.7
6.5
4.4
1.1
0.7
88
75
33
10
11
16
6
Max Units
–0.42
–100
–1.5
–1.2
100
115
155
165
6.2
–1
20
20
29
13
FDN338P Rev F(W)
mV/ C
mV/ C
m
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A