FDN338P Fairchild Semiconductor, FDN338P Datasheet - Page 4

• Manufacturer Part Number: FDN338P
• Description: MOSFET P-CH 20V 1.6A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN338P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 115 mOhm @ 1.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 451pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.115 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.6 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN338PTR

Typical Characteristics
5
4
3
2
1
0
0.01
0.1
10
0
Figure 9. Maximum Safe Operating Area.
1
Figure 7. Gate Charge Characteristics.
0.1
I
0.001
D
0.01
= -1.6A
R
SINGLE PULSE
R
0.1
DS(ON)
0.0001
1
V
JA
T
GS
A
= 270
= 25
=-4.5V
LIMIT
1
D = 0.5
0.2
o
o
0.1
C/W
C
0.05
-V
0.02
DS
0.01
Q
, DRAIN-SOURCE VOLTAGE (V)
g
SINGLE PULSE
, GATE CHARGE (nC)
1
2
DC
0.001
10s
1s
Figure 11. Transient Thermal Response Curve.
100ms
3
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
V
DS
10
10ms
= -5V
0.01
1ms
4
-15V
-10V
5
100
0.1
t
1
, TIME (sec)
20
15
10
600
500
400
300
200
100
5
0
0.001
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
0.01
2
-V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
4
t
C
C
C
1
10
, TIME (sec)
ISS
O S S
R S S
1
6
P(pk)
10
Duty Cycle, D = t
8
T
R
R
J
JA
- T
100
JA
SINGLE PULSE
R
(t) = r(t) + R
A
V
f = 1MHz
= 270 °C/W
t
JA
1
T
G S
= P * R
t
A
100
= 270°C/W
2
10
FDN338P Rev F(W)
= 0 V
= 25°C
JA
1
JA
(t)
1000
/ t
12
2
1000