NDS332P Fairchild Semiconductor, NDS332P Datasheet - Page 2

• Manufacturer Part Number: NDS332P
• Description: MOSFET P-CH 20V 1A SSOT3
• Manufacturer: Fairchild Semiconductor

Specifications of NDS332P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 195pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 410mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -600mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS332PTR

Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DSS
GSS
GSS
D(ON)
D(on)
r
D(off)
f
F
GS(th)
DS(ON)
iss
oss
rss
g
gs
gd
S
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage
Gate - Body Leakage
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 2)
Current
Current
(Note 2)
(T
A
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
= 0 V, I
= -16 V, V
= 8 V, V
= -8 V, V
= V
= -2.7 V, I
= -4.5 V, I
= -2.7 V, V
= -4.5 V, V
= -5 V, I
= -10 V, V
= -6 V, I
= -4.5 V, R
= -5 V, I
= -4.5 V
GS
, I
D
D
D
D
D
DS
= -250 µA
= -250 µA
= -1 A
DS
= -1 A,
D
D
GS
= 0 V
GS
= -1 A,
DS
DS
= 0 V
GEN
= -1 A
= -1.1 A
= 0 V
= 0 V,
= -5 V
= -5 V
= 6
T
T
T
J
J
J
= 55°C
=125°C
=125°C
Min
-0.4
-0.3
-1.5
-2.5
-20
-0.45
Typ
0.35
0.26
-0.6
195
105
0.5
2.2
3.7
0.5
0.9
40
30
25
27
8
Max
-100
0.41
0.74
-0.8
100
-10
0.3
15
45
45
45
-1
-1
5
NDS332P Rev. E
Units
µA
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
S
V
V
A
pF
pF
pF