NDS332P Fairchild Semiconductor, NDS332P Datasheet - Page 5

• Manufacturer Part Number: NDS332P
• Description: MOSFET P-CH 20V 1A SSOT3
• Manufacturer: Fairchild Semiconductor

Specifications of NDS332P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 195pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 410mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -600mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS332PTR

Typical Electrical Characteristics
V
GS
Figure 7. Breakdown Voltage Variation with
500
300
200
100
Figure 11. Switching Test Circuit
50
30
20
Figure 9. Capacitance Characteristics
0.1
1.12
1.08
1.04
0.96
0.92
1
-50
f = 1 MHz
V
I
GS
D
R
0.2
= -250µA
GEN
= 0V
-25
-V
DS
Temperature
T
0
, DRAIN TO SOURCE VOLTAGE (V)
J
0.5
V
, JUNCTION TEMPERATURE (°C)
IN
G
2 5
1
5 0
D
S
.
V
2
DD
7 5
R
.
L
1 0 0
DUT
5
(continued)
.
C iss
C oss
C rss
1 2 5
10
V
OUT
1 5 0
20
V
t
V
OUT
d(on)
IN
Figure 8. Body Diode ForwardVoltageVariation with
0.0001
0.001
1 0 %
0.05
0.01
5
4
3
2
1
0
0.1
0
1
Figure 10. Gate Charge Characteristics
0
Figure 12. Switching Waveforms
I
V
D
Source Current and Temperature
GS
t
= -1A
5 0 %
o n
=0V
1 0 %
-V
0.2
1
SD
, BODY DIODE FORWARD VOLTAGE (V)
t
9 0 %
PULSE WIDTH
r
T = 125°C
J
Q
0.4
g
, GATE CHARGE (nC)
2
25°C
t
d(off)
0.6
-55°C
5 0 %
3
V
DS
= -5V
9 0 %
0.8
t
1 0 %
off
.
9 0 %
-15V
4
.
.
INVERTED
t
NDS332PRev. E
-10V
f
1
5