DMP2066LDM-7 Diodes Inc, DMP2066LDM-7 Datasheet - Page 2

• Manufacturer Part Number: DMP2066LDM-7
• Description: MOSFET P-CH 20V 4.6A SOT-26
• Manufacturer: Diodes Inc

Specifications of DMP2066LDM-7

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 10.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 820pF @ 15V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-26
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMP2066LDMDITR

Electrical Characteristics
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
On State Drain Current (Note 5)
Static Drain-Source On-Resistance (Note 5)
Forward Transconductance (Note 5)
Diode Forward Voltage (Note 5)
Maximum Body-Diode Continuous Current (Note 1)
DYNAMIC PARAMETERS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
DMP2066LDM
Document number: DS31464 Rev. 3 - 2
30
24
18
12
5. Test pulse width t = 300μs.
6. Guaranteed by design. Not subject to production testing.
6
0
0
0.5
V , DRAIN-SOURCE VOLTAGE (V)
Characteristic
DS
Fig. 1 Typical Output Characteristic
1
V
GS
1.5
= 10V
2
2.5
@T
V
3
GS
A
= 4.5V
T
= 25°C unless otherwise specified
V
3.5
J
GS
= 25°C
= 1.5V
V
V
V
GS
4
GS
GS
= 3.0V
= 2.5V
= 2.0V
4.5
Symbol
R
BV
V
I
D (ON)
DS (ON)
t
t
I
I
C
Q
Q
V
C
C
GS(th)
g
d(on)
d(off)
Q
DSS
GSS
R
I
5
FS
oss
t
t
SD
rss
GS
GD
DSS
S
iss
www.diodes.com
r
f
G
G
2 of 5
Min
-0.6
-0.5
-20
-15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
20
16
12
-0.96
-0.72
10.1
28.0
23.4
Typ
820
200
160
8
4
0
2.5
1.5
4.3
4.4
9.9
29
55
⎯
⎯
⎯
⎯
⎯
9
0
V
0.5
DS
T = 125°C
Fig. 2 Typical Transfer Characteristic
V
A
= 5.0V
±100
Max
GS
-1.2
-1.4
1.7
40
70
⎯
-1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
T = 150°C
, GATE-SOURCE VOLTAGE (V)
1
A
1.5
Unit
mΩ
nC
μA
nA
pF
pF
pF
ns
V
V
A
S
V
A
Ω
T = -55°C
A
2
T = 25°C
A
I
V
V
V
V
V
V
V
I
V
f = 1.0MHz
V
f = 1.0MHz
V
I
V
I
T = 85°C
D
S
D
D
DS
DS
DS
GS
GS
GS
DS
DS
DS
DS
DS
A
2.5
= -2.1A, V
= -250μA, V
= -4.5A
= -1A, R
= -20V, V
= 0V, V
= V
= -4.5V, V
= -4.5V, I
= -2.5V, I
= -10V, I
= -15V, V
= 0V, V
= -10V, V
= -10V, V
DMP2066LDM
Test Condition
GS
3
, I
G
GS
GS
D
GS
= 6.0Ω
D
D
D
GS
= -250μA
GS
GS
GS
© Diodes Incorporated
GS
DS
= -4.6A
⎯
= ±12V
3.5
= 0V
= 0V
= -4.6A
= -3.8A
= 0V
= 0V
= -4.5V,
= -4.5V,
= 0V
= -5V
August 2008
4