DMP2066LDM-7 Diodes Inc, DMP2066LDM-7 Datasheet - Page 3

• Manufacturer Part Number: DMP2066LDM-7
• Description: MOSFET P-CH 20V 4.6A SOT-26
• Manufacturer: Diodes Inc

Specifications of DMP2066LDM-7

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 10.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 820pF @ 15V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-26
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMP2066LDMDITR

DMP2066LDM
Document number: DS31464 Rev. 3 - 2
0.01
Fig. 5 Normalized On-Resistance vs. Ambient Temperature
20
16
12
1.6
1.4
1.2
1.0
0.8
0.6
0.1
8
4
0
1
-50 -25
0
0
T = 25°C
Fig. 7 Diode Forward Voltage vs. Current
A
0.2
V , SOURCE-DRAIN VOLTAGE (V)
T , AMBIENT TEMPERATURE (°C)
I , DRAIN-SOURCE CURRENT (A)
vs. Drain Current and Gate Voltage
SD
D
A
6
Fig. 3 Typical On-Resistance
0
V
0.4
GS
25
= 2.5V
12
V
0.6
V
50
GS
GS
= 4.5V
= 10V
18
V
75
I = 10A
GS
0.8
D
= 10V
V
100
GS
I = 5A
D
= 4.5V
24
1
125 150
1.2
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10,000
1,000
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
0.08
0.06
0.04
0.02
2.0
2.4
1.6
1.2
0.8
0.4
100
0
-50 -25
0
0
0
V
GS
T , AMBIENT TEMPERATURE (°C)
V , DRAIN-SOURCE VOLTAGE (V)
vs. Drain Current and Temperature
A
DS
= 4.5V
6
Fig. 8 Typical Total Capacitance
Fig. 4 Typical On-Resistance
0
-I , DRAIN CURRENT (A)
5
I = 250µA
D
D
C
I = 1mA
C
D
25
oss
rss
12
50
C
10
iss
18
75
f = 1MHz
DMP2066LDM
100
T = 150°C
T = -55°C
T = 125°C
T = 85°C
T = 25°C
A
A
15
A
A
A
24
© Diodes Incorporated
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August 2008
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