NDS356AP Fairchild Semiconductor, NDS356AP Datasheet
NDS356AP
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NDS356AP Summary of contents
Page 1
... Exceptional on-resistance and maximum DC current capability 25°C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) September 1996 = 0 =-4.5 V DS(ON 0 =-10 V. DS(ON design for superior . DS(ON NDS356AP Units -30 V ±20 V ±1.1 A ±10 0.5 W 0.46 -55 to 150 °C 250 °C/W 75 °C/W NDS356AP Rev.C 1 ...
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... -20V -250 µ =125° -4 -1 =125° - - 1.0 MHz GEN Min Typ Max Units - µA -10 µA 100 nA -100 nA -0.8 -1.6 -2.5 V -0.5 -1.3 -2.2 0.25 0.3 0.35 0.4 0.14 0 280 pF 170 3.4 4.4 nC 0 NDS356AP Rev.C ...
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... C/W when mounted on a 0.02 in pad of 2oz copper 270 C/W when mounted on a 0.001 in pad of 2oz copper Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions -0.42 (Note Min Typ Max Units -0.42 A -10 A -0.8 -1 guaranteed NDS356AP Rev.C ...
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... Figure 4. On-Resistance Variation with Drain Current and Temperature 1.2 25°C 1.1 125°C 1 0.9 0.8 0.7 -50 - Figure 6. Gate Threshold Variation . -4.0 -4.5 -5.0 -5.5 -6.0 -7 DRAIN CURRENT ( 25°C -55° DRAIN CURRENT ( 250µ JUNCTION TEMPERATURE (° with Temperature NDS356AP Rev ...
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... Figure 10. Gate Charge Characteristics t t d(on OUT V OUT DUT Figure 12. Switching Waveforms = 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Source Current and Temperature V = -5V DS -15V GATE CHARGE (nC off d(off INVERTED PULSE WIDTH . NDS356AP Rev.C 1.2 . -10V ...
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... Current versus Copper Mounting Pad Area. 0.01 0 TIME (sec -4.5V GS SINGLE PULSE = See Note 25° 0 DRAIN-SOURCE VOLTAGE ( 4.5"x5" FR-4 Board Still Air V = -4.5V GS 0.1 0.2 0.3 2 2oz COPPER MOUNTING PAD AREA ( ( See Note 1b JA P(pk ( Duty Cycle 100 20 30 0.4 300 1 NDS356AP Rev.C ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...