NDS356AP Fairchild Semiconductor, NDS356AP Datasheet - Page 5

• Manufacturer Part Number: NDS356AP
• Description: MOSFET P-CH 30V 1.1A SSOT3
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of NDS356AP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4.4nC @ 5V
• Input Capacitance (ciss) @ Vds: 280pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.2Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 1.1A
• Power Dissipation: 500mW
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS356APTR

V
Typical Electrical Characteristics
GS
600
400
300
200
100
Figure 11. Switching Test Circuit
50
30
Figure 9. Capacitance Characteristics.
Figure 7. Breakdown Voltage Variation with
0.1
1.08
1.06
1.04
1.02
0.98
0.96
0.94
1
-50
R
f = 1 MHz
V
GS
0.2
GEN
I
= 0 V
D
-25
= -250µA
-V
DS
V
T
, DRAIN TO SOURCE VOLTAGE (V)
0
0.5
Temperature.
J
IN
, JUNCTION TEMPERATURE (°C)
G
2 5
1
D
5 0
S
V
DD
2
R
7 5
L
.
DUT
C oss
1 0 0
C rss
C iss
5
(continued)
1 2 5
V
10
OUT
1 5 0
20
V
t
V
OUT
d(on)
IN
Figure 8. Body Diode Forward Voltage Variation with
0.0001
1 0 %
0.001
10
0.01
Figure 10. Gate Charge Characteristics
8
6
4
2
0
0.5
0.1
0
5
2
1
0
Figure 12. Switching Waveforms
I
D
V
GS
t
= -1.1A
5 0 %
o n
1
= 0V
1 0 %
0.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
t
9 0 %
PULSE WIDTH
r
Source Current and Temperature
2
0.4
Q
g
T = 125°C
, GATE CHARGE (nC)
J
3
0.6
t
d(off)
25°C
-55°C
4
5 0 %
0.8
V
9 0 %
DS
5
t
1 0 %
off
= -5V
.
9 0 %
1
-15V
.
NDS356AP Rev.C
INVERTED
6
t
f
1.2
-10V
.
7
1