FDC604P Fairchild Semiconductor, FDC604P Datasheet - Page 4

• Manufacturer Part Number: FDC604P
• Description: MOSFET P-CH 20V 5.5A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC604P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 33 mOhm @ 5.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1926pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.033 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 23 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC604PTR

Typical Characteristics
5
4
3
2
1
0
0.01
100
0.1
Figure 9. Maximum Safe Operating Area.
10
0
1
Figure 7. Gate Charge Characteristics.
0.1
0 .0 0 1
0 .0 1
R
0 .1
DS(ON)
SINGLE PULSE
R
0 .0 0 0 1
1
V
I
JA
T
D
GS
A
= -5.5A
= 156
LIMIT
= 25
= -4.5V
5
o
o
C
C/W
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
D = 0 .5
Q
g
1
, GATE CHARGE (nC)
0 .2
10
0 . 1
0 . 0 5
0 . 0 0 1
DC
0 .0 2
1s
100ms
0 .0 1
S IN G L E P U L S E
V
DS
10ms
Figure 11. Transient Thermal Response Curve.
= -5V
15
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1ms
100 s
10
-15V
0 .0 1
20
-10V
100
25
0 .1
t
1
, T IM E ( s e c )
5
4
3
2
1
0
3500
3000
2500
2000
1500
1000
0.1
500
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
-V
Power Dissipation.
DS
5
SINGLE PULSE TIME (SEC)
, DRAIN TO SOURCE VOLTAGE (V)
1
C
C
C
RSS
ISS
OSS
1 0
10
P ( p k )
D u ty C y c le , D = t
T
10
R
R
J
J A
- T
1 0 0
J A
( t) = r ( t) + R
SINGLE PULSE
R
A
= 1 5 6 ° C /W
t
1
15
JA
= P * R
T
t
2
A
= 156
= 25
FDC604P Rev C(W)
V
f = 1MHz
GS
o
o
C/W
C
J A
= 0 V
1
( t)
J A
/ t
2
100
1 0 0 0
20