ZXMP6A17E6TA Diodes Zetex, ZXMP6A17E6TA Datasheet - Page 4

• Manufacturer Part Number: ZXMP6A17E6TA
• Description: MOSFET P-CH 60V 3A SOT-23-6
• Manufacturer: Diodes Zetex
• Type: Power MOSFETr

Specifications of ZXMP6A17E6TA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 2.3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 637pF @ 30V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.125Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 3A
• Power Dissipation: 1.92W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-23
• Continuous Drain Current: 3A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMP6A17E6TR

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
Forward Transconductance (Notes 7 & 8)
Diode Forward Voltage (Note 7)
Reverse recovery time (Note 8)
Reverse recovery charge (Note 8)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 9)
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Notes:
ZXMP6A17E6
Document Number: DS33589 Rev. 2 - 2
7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
V
C
C
GS(th)
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
Q
g
t
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
g
www.diodes.com
Min
-1.0
4 of 8
-60
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0.100
0.130
-0.85
25.1
27.2
17.7
26.2
11.3
Typ
637
4.7
9.8
1.6
4.4
2.6
3.4
70
53
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⎯
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0.125
0.190
±100
-0.95
Max
-1.0
-3.0
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Diodes Incorporated
A Product Line of
Unit
μA
nA
nC
nC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
I
I
V
f = 1MHz
V
V
V
I
D
D
S
F
D
DS
GS
GS
GS
DS
DS
GS
GS
DD
= -1.7A, di/dt = 100A/μs
= -250μA, V
= -250μA, V
= -2A, V
= -1A, R
= -60V, V
= ±20V, V
= -10V, I
= -4.5V, I
= -15V, I
= -30V, V
= -5.0V
= -10V
= -30V, V
Test Condition
GS
G
ZXMP6A17E6
≅ 6.0Ω
D
D
= 0V
D
GS
GS
GS
GS
DS
DS
= -2.3A
= -2.3A
= -1.9A
= 0V
= 0V
= -10V
= 0V
= V
= 0V
V
I
© Diodes Incorporated
D
December 2010
DS
= -2.3A
GS
= -30V