ZXMP6A17E6TA Diodes Zetex, ZXMP6A17E6TA Datasheet - Page 6

• Manufacturer Part Number: ZXMP6A17E6TA
• Description: MOSFET P-CH 60V 3A SOT-23-6
• Manufacturer: Diodes Zetex
• Type: Power MOSFETr

Specifications of ZXMP6A17E6TA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 2.3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 637pF @ 30V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.125Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 3A
• Power Dissipation: 1.92W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-23
• Continuous Drain Current: 3A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMP6A17E6TR

Typical Characteristics - continued
Test Circuits
ZXMP6A17E6
Document Number: DS33589 Rev. 2 - 2
Capacitance v Drain-Source Voltage
1000
800
600
400
200
0
V
G
0.1
-V
Q
GS
DS
Basic gate charge waveform
t
r
Switching time waveforms
t
(on)
- Drain - Source Voltage (V)
C
ISS
t
d(of )
1
Q
Q
G
C
GD
OSS
Charge
C
RSS
t
r
t
(on)
10
V
f = 1MHz
GS
t
d(on)
= 0V
www.diodes.com
90%
10%
V
V
6 of 8
DS
GS
Gate-Source Voltage v Gate Charge
10
8
6
4
2
0
0
Switching time test circuit
Gate charge test circuit
Pulse width
Duty factor 0.1%
2
12V
R
G
4
Diodes Incorporated
Q - Charge (nC)
0.2 F
1 S
A Product Line of
6
V
regulator
GS
Current
50k
I
G
8
V
GS
10
R
D.U.T
Same as
D
D.U.T
12
V
I
V
D
DS
DS
= -2.3A
14
ZXMP6A17E6
= -30V
I
D
V
DS
16
V
© Diodes Incorporated
DD
December 2010
18