FDN5618P Fairchild Semiconductor, FDN5618P Datasheet - Page 5

• Manufacturer Part Number: FDN5618P
• Description: MOSFET P-CH 60V 1.25A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDN5618P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 1.25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.25A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 13.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 430pF @ 30V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.17 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4.3 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.25 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.17Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN5618PTR

Q20070473DATHBT
Test: -65C, 150C (Temperature Cycle)
Lot
Q20070473AATMCL1
Q20070473AATMCL1
Q20070473ABTMCL1
Q20070473ABTMCL1
Q20070473ACTMCL1
Q20070473ACTMCL1
Q20070473BATMCL1
Q20070473BATMCL1
Q20070473BBTMCL1
Q20070473BBTMCL1
Q20070473BCTMCL1
Q20070473BCTMCL1
Q20070473CATMCL1
Q20070473CATMCL1
Q20070473DATMCL1
Q20070473DATMCL1
Q20070473EATMCL1
Q20070473EATMCL1
Q20070473FATMCL1
Q20070473FATMCL1
Q20070473FBTMCL1
Q20070473FBTMCL1
Q20070473GATMCL1
Q20070473GATMCL1
Test: 110C (Highly Accelerated Stress Test)
Lot
Q20070473AAHAST2
Q20070473AAHAST2
Q20070473BAHAST2
Q20070473BAHAST2
Q20070473BBHAST2
Q20070473BBHAST2
Q20070473BCHAST2
Q20070473BCHAST2
Q20070473CAHAST2
Q20070473CAHAST2
Q20070473FAHAST2
Q20070473FAHAST2
Q20070473GAHAST2
Q20070473GAHAST2
Test: 130C (Unbiased HAST)
Lot
Q20070473FBUHAST1
Q20070473GAUHAST1
Test: MSL(1), PKG(Small), PeakTemp(260c), Cycles(3) (Precondition)
Lot
Q20070473AAPCNL1A
Q20070473ABPCNL1A
Q20070473ACPCNL1A
Q20070473BAPCNL1A
Q20070473BBPCNL1A
Q20070473BCPCNL1A
Q20070473CAPCNL1A
Q20070473DAPCNL1A
Q20070473EAPCNL1A
Q20070473FAPCNL1A
Q20070473FBPCNL1A
Q20070473GAPCNL1A
Product Id Description : This final notification covers Fairchild Semiconductor SSOT-3
Device
FDC637BNZ
FDC637BNZ
FDC637BNZ
FDC637BNZ
FDC637BNZ
FDC637BNZ
FDC638APZ
FDC638APZ
FDC638APZ
FDC638APZ
FDC638APZ
FDC638APZ
FDC658AP
FDC658AP
FAN2558SX
FAN2558SX
FDC365P
FDC365P
FDN338P
FDN338P
FDN338P
FDN338P
FDN371N
FDN371N
Device
FDC637BNZ
FDC637BNZ
FDC638APZ
FDC638APZ
FDC638APZ
FDC638APZ
FDC638APZ
FDC638APZ
FDC658AP
FDC658AP
FDN338P
FDN338P
FDN371N
FDN371N
Device
FDN338P
FDN371N
Device
FDC637BNZ
FDC637BNZ
FDC637BNZ
FDC638APZ
FDC638APZ
FDC638APZ
FDC658AP
FAN2558SX
FDC365P
FDN338P
FDN338P
FDN371N
0/77
100-CYCLES
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
132-HOURS
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
96-HOURS
0/77
0/77
Results
0/231
0/154
0/154
0/231
0/231
0/231
0/308
0/231
0/154
0/308
0/231
0/231
500-CYCLES
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
264-HOURS
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
Failure Code
Failure Code
Failure Code
Failure Code
Pg. 5