This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Reel Size 7’’ October 2000 = 0.170 Ω –10 V DS(ON 0.230 Ω –4.5 V DS(ON Ratings Units –60 V ±20 V –1.25 A –10 W 0.5 0.46 –55 to +150 °C 250 °C/W 75 °C/W Tape width Quantity 8mm 3000 units FDN5618P Rev C(W) ...
... Min Typ Max Units –60 V –58 mV/°C –1 µA 100 nA –100 nA –1 –1.6 – mV/°C Ω 0.148 0.170 0.185 0.230 0.245 0.315 –5 A 4.3 S 430 6 16 8.6 13.8 nC 1.5 nC 1.3 nC –0.42 A –0.7 –1.2 V FDN5618P Rev C(W) ...
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -3.0V GS -3.5V -4.0V -4.5V -6.0V -10V DRAIN CURRENT ( -0. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDN5618P Rev C( 1.4 ...
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 270°C/W θ 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( θ JA θ 270 °C/W θ JA P(pk (t) θ Duty Cycle 100 1000 FDN5618P Rev C(W) 12 ...