FDN5618P Fairchild Semiconductor, FDN5618P Datasheet - Page 3

• Manufacturer Part Number: FDN5618P
• Description: MOSFET P-CH 60V 1.25A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDN5618P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 1.25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.25A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 13.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 430pF @ 30V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.17 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4.3 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.25 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.17Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN5618PTR

Typical Characteristics
5
4
3
2
1
0
6
5
4
3
2
1
0
0
1
V
1.3
1.2
1.1
0.9
0.8
GS
Figure 1. On-Region Characteristics.
-4.5V
1
-6.0V
-50
Figure 5. Transfer Characteristics.
Figure 3. On-Resistance Variation
= -10V
V
DS
V
I
D
GS
1.5
= -1.25A
= - 5V
-25
= -10V
-3.5V
-V
1
-V
GS
-4.0V
withTemperature.
DS
, GATE TO SOURCE VOLTAGE (V)
T
, DRAIN-SOURCE VOLTAGE (V)
0
J
, JUNCTION TEMPERATURE (
2
-3.0V
25
2.5
2
50
T
A
-2.5V
= 125
75
3
o
C
3
100
o
C)
-55
3.5
o
C
25
125
o
C
150
4
4
Figure 6. Body Diode Forward Voltage Variation
0.6
0.5
0.4
0.3
0.2
0.1
0.0001
0.001
2
0.01
2.2
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
10
2
1
1
0
T
0
A
Drain Current and Gate Voltage.
V
= 25
GS
V
= 0V
GS
o
C
Gate-to-Source Voltage.
0.2
= -3.0V
-V
-V
4
1
SD
GS
T
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
A
= 125
T
0.4
A
= 125
-3.5V
-I
o
D
C
, DRAIN CURRENT (A)
o
2
C
0.6
25
6
-4.0V
o
C
0.8
-55
3
-4.5V
o
C
1
-6.0V
8
FDN5618P Rev C(W)
4
I
D
1.2
= -0.65 A
-10V
1.4
10
5