FDZ191P Fairchild Semiconductor, FDZ191P Datasheet - Page 4

• Manufacturer Part Number: FDZ191P
• Description: MOSFET P-CH 20V 3A 6WLCSP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDZ191P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-WLCSP
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.085 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDZ191PTR

FDZ191P Rev.F3 (W)
Typical Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 7.
Figure 9.
5
4
3
2
1
0
25
0.5
10
50
0
Current vs Ambient Temperature
10
1
-3
I
R
D
T
= -1A
JA
2
50
Maximum Continuous Drain
Gate Charge Characteristics
= 65
T
V
A
GS
, CASE TEMPERATURE
Q
o
C/W
g
= - 2.5V
V
, GATE CHARGE(nC)
V
GS
4
DD
75
= -10V
10
= -5V
-2
Figure 11. Single Pulse Maximum Power Dissipation
SINGLE PULSE
V
6
GS
T
100
= -4.5V
V
J
DD
= 25°C unless otherwise noted
V
= -15V
DD
8
= -10V
(
o
C
125
)
10
10
-1
t, PULSE WIDTH (s)
150
12
10
4
0
0.01
2000
1000
0.1
100
30
10
50
1
0.1
0.1
SINGLE PULSE
T J = MAX RATED
R
T A = 25
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
Figure 8.
T
Figure 10.
f = 1MHz
V
JA
GS
= 133
-V
10
O
= 0V
C
DS
-V
1
o
to Source Voltage
C/W
DS
, DRAIN TO SOURCE VOLTAGE (V)
DS(on)
Operating Area
, DRAIN to SOURCE VOLTAGE (V)
Capacitance vs Drain
Forward Bias Safe
1
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
1
I = I
25
10
o
2
C DERATE PEAK
150 T
----------------------- -
C
C
C
rss
oss
iss
125
–
10
A
T
A
= 25
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10
o
100ms
100us
10ms
1s
10s
DC
C
1ms
10
3
20
80