SI1417EDH-T1-E3 Vishay, SI1417EDH-T1-E3 Datasheet
SI1417EDH-T1-E3
Specifications of SI1417EDH-T1-E3
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SI1417EDH-T1-E3 Summary of contents
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... 85_C 25_C 85_C stg Symbol Typical sec R thJA Steady State Steady State R thJF Si1417EDH Vishay Siliconix Steady State Unit –12 V "12 –2.7 –3.3 –2.4 –1.9 A –8 –1.4 –0.9 1.56 1.0 W 0.81 0.52 _C –55 to 150 Maximum Unit 60 80 100 125 _C/W ...
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... Si1417EDH Vishay Siliconix _ Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ...
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... Q – Total Gate Charge (nC) g Document Number: 71412 S-03187—Rev. A, 05-Mar-01 New Product 6.0 7.5 6.0 7.5 Si1417EDH Vishay Siliconix Transfer Characteristics –55_C C 6 25_C 0.0 0.5 1.0 1.5 V – Gate-to-Source Voltage (V) GS Capacitance 1200 1000 C iss 800 ...
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... Si1417EDH Vishay Siliconix Source-Drain Diode Forward Voltage 150_C J 1 0.1 0 0.3 0.6 0.9 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 = 250 0.3 0.2 0.1 0.0 –0.1 –0.2 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...
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... Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Document Number: 71412 S-03187—Rev. A, 05-Mar-01 New Product _ Normalized Thermal Transient Impedance, Junction-to-Foot –2 10 Square Wave Pulse Duration (sec) Si1417EDH Vishay Siliconix – www.vishay.com 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...