SI1417EDH-T1 Vishay/Siliconix, SI1417EDH-T1 Datasheet

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SI1417EDH-T1

Manufacturer Part Number
SI1417EDH-T1
Description
MOSFET 12V 3.3A 1.56W 85 mohms @ 4.5V
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI1417EDH-T1

Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2.7 A
Resistance Drain-source Rds (on)
0.16 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Fall Time
1400 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Rise Time
1400 ns
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
4900 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1417EDH-T1
Manufacturer:
SILICONIX
Quantity:
20 000
Part Number:
SI1417EDH-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
104 585
Part Number:
SI1417EDH-T1-E3
Manufacturer:
HRS
Quantity:
169
Part Number:
SI1417EDH-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI1417EDH-T1-E3
Quantity:
70 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71412
S10-0935-Rev. B, 19-Apr-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
G
Ordering Information: Si1417EDH-T1-E3 (Lead (Pb)-free)
D
D
V
DS
- 12
1
2
3
(V)
SC-70 (6-LEADS)
SOT-363
Top View
0.085 at V
0.115 at V
0.160 at V
Si1417EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
6
5
4
R
DS(on)
J
a
D
D
S
= 150 °C)
a
GS
GS
GS
= - 4.5 V
= - 2.5 V
= - 1.8 V
(Ω)
P-Channel 12 V (D-S) MOSFET
Marking Code
a
BB
XX
Part # Code
a
A
Lot Traceability
and Date Code
= 25 °C, unless otherwise noted
I
- 3.3
- 2.9
- 2.4
D
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 5 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• ESD Protected: 3000 V
• Thermally Enhanced SC-70 Package
• Compliant to RoHS Directive 2002/95/EC
• Load Switching
• PA Switch
• Level Switch
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
®
G
Power MOSFET: 1.8 V Rated
Typical
- 3.3
- 2.4
- 1.4
1.56
0.81
100
5 s
60
34
- 55 to 150
3 k
± 12
- 12
- 8
Steady State
Maximum
- 2.7
- 1.9
- 0.9
0.52
125
1.0
80
45
Vishay Siliconix
Si1417EDH
D
S
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI1417EDH-T1

SI1417EDH-T1 Summary of contents

Page 1

... D Marking Code Top View Ordering Information: Si1417EDH-T1-E3 (Lead (Pb)-free) Si1417EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Diode Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si1417EDH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 71412 S10-0935-Rev. B, 19-Apr 4.5 6.0 7.5 4.5 6.0 7.5 Si1417EDH Vishay Siliconix ° ° 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 1200 1000 C iss 800 600 400 C oss ...

Page 4

... Si1417EDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 250 µA D 0.2 0.1 0.0 - 0 Junction Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com ° ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71412. Document Number: 71412 S10-0935-Rev. B, 19-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1417EDH Vishay Siliconix - www.vishay.com ...

Page 6

- - Document Number: 71154 06-Jul-01 Package Information Dim Min Nom Max A 0.90 – A – – 0.80 ...

Page 7

... BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the basic pad layout and dimensions. These pad patterns are sufficient for the low to medium power applications for which this package is intended ...

Page 8

AN815 Vishay Siliconix Front of Board SC70-6 THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (Package Performance) The junction to foot thermal resistance is a useful method of comparing different packages thermal performance. A helpful way of presenting the thermal performance of the ...

Page 9

Alloy 42 160 Time (Secs) FIGURE 4. Leadframe Comparison on EVB Document Number: 71334 12-Dec-03 250 200 150 100 Copper ...

Page 10

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead Return to Index Return to Index www.vishay.com 18 0.067 (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72602 Revision: 21-Jan-08 ...

Page 11

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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