NDT3055L Fairchild Semiconductor, NDT3055L Datasheet

NDT3055L

Manufacturer Part Number

NDT3055L

Description

MOSFET N-CH 60V 4A SOT-223-4

Manufacturer

Fairchild Semiconductor

Type

Power MOSFETr

Datasheet

1.NDT3055L.pdf (5 pages)

Specifications of NDT3055L

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

100 mOhm @ 4A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

20nC @ 10V

Input Capacitance (ciss) @ Vds

345pF @ 25V

Power - Max

1.1W

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.1Ohm

Drain-source On-volt

60V

Gate-source Voltage (max)

±20V

Drain Current (max)

Power Dissipation

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

3 +Tab

Package Type

SOT-223

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.1 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

7 S

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

4 A

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 65 C

05+

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NDT3055LTR

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Symbol

THERMAL CHARACTERISTICS

* Order option J23Z for cropped center drain lead.

NDT3055L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

These logic level N-Channel enhancement mode power

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process is especially tailored to

minimize on-state resistance and provide superior

switching performance, and withstand high energy pulse

in the avalanche and commutation modes. These devices

are particularly suited for low voltage applications such as

DC motor control and DC/DC conversion where fast

switching, low in-line power loss, and resistance to

transients are needed.

Absolute Maximum Ratings

General Description

DSS

GSS

SOT-223

SuperSOT

STG

Parameter

Drain-Source Voltage

Gate-Source Voltage - Continuous

Maximum Drain Current - Continuous

Maximum Power Dissipation

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

-3

SuperSOT

-6

- Pulsed

= 25

C unless otherwise noted

(Note 1b)

(Note 1c)

SuperSOT

(Note 1a)

(Note 1)

-8

Features

4 A, 60 V. R

Low drive requirements allowing operation directly from logic

drivers. V

High density cell design for extremely low R

High power and current handling capability in a widely used

surface mount package.

SOT-223

(J23Z)

SO-8

GS(TH)

DS(ON)

< 2V.

= 0.120

= 0.100

NDT3055L

-65 to 150

±20

1.3

1.1

SOT-223

@ V

= 4.5 V.

= 10 V,

August 1998

DS(ON)

SOIC-16

NDT3055L Rev.A1

Units

°C/W

°C

Related parts for NDT3055L

NDT3055L Summary of contents

Page 1

... TM SuperSOT -8 SO SOT-223 (J23Z unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) August 1998 = 0.100 @ DS(ON 0.120 @ V = 4.5 V. DS(ON) GS < 2V. GS(TH) . DS(ON) SOT-223 SOIC- NDT3055L 60 ± 1.3 1.1 -65 to 150 42 12 NDT3055L Rev.A1 S Units °C °C/W °C/W ...

Page 2

... Cu. Min Typ Max Units mV =125° 100 -100 1 1 0.07 0.1 T =125°C 0.125 0.18 J 0.103 0. 345 110 7 1.7 3.2 2.5 0.8 1.2 the drain pins 110 C/W when mounted on a 0.00123 0.066 pad of 2oz Cu. NDT3055L Rev. µA µ ...

Page 3

... I , DRAIN CURRENT (A) D Drain Current and Gate Voltage 125°C A 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to- Source Voltage 125°C A 25°C -55°C 0 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Current and Temperature. NDT3055L Rev. 1.2 1.4 ...

Page 4

... Transient thermal response will change depending on the circuit board design. C iss C oss C rss MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =110°C 25°C A 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. R ( 110 °C/W JA P(pk ( Duty Cycle 100 NDT3055L Rev.A1 60 100 300 300 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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