NDT3055L Fairchild Semiconductor, NDT3055L Datasheet - Page 3

• Manufacturer Part Number: NDT3055L
• Description: MOSFET N-CH 60V 4A SOT-223-4
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of NDT3055L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 345pF @ 25V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 4A
• Power Dissipation: 3W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Dc: 05+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDT3055LTR

Typical Electrical Characteristics
10
8
6
4
2
0
1
Figure 5. Transfer Characteristics.
25
20
15
10
Figure 1. On-Region Characteristics.
Figure 3. On-Resistance Variation
5
0
0
V
DS
1.8
1.6
1.4
1.2
0.8
0.6
1
-50
1.5
= 5V
V
I = 4.0 A
D
GS
V
= 10 V
-25
GS
1
2
V = 10V
with Temperature.
V
GS
, GATE TO SOURCE VOLTAGE (V)
DS
, DRAIN-SOURCE VOLTAGE (V)
2.5
T , JUNCTION TEMPERATURE (°C)
0
J
6.0V
2
T = -55°C
25
3
J
5.0V
50
4.5V
3.5
3
25°C
4.0V
75
3.5V
125°C
4
3.0V
4
100
4.5
125
5
5
150
0.28
0.24
0.16
0.12
0.08
0.04
1.8
1.6
1.4
1.2
0.8
0.0001
0.2
0.001
2
1
0
Figure 2. On-Resistance Variation with
0.01
0
0.1
2
Figure 4. On-Resistance Variation with
30
10
Figure 6. Body Diode Forward Voltage
1
0
V
GS
V
GS
= 0V
0.2
= 4.0V
5
V
SD
V
Drain Current and Gate Voltage.
GS
4
4.5V
, BODY DIODE FORWARD VOLTAGE (V)
Gate-to- Source Voltage.
Variation with Current and
, GATE TO SOURCE VOLTAGE (V)
T = 125°C
0.4
Temperature.
I , DRAIN CURRENT (A)
A
5.0V
D
10
6.0V
0.6
25°C
6
8.0V
-55°C
15
0.8
T = 125°C
A
10V
25°C
1
8
20
NDT3055L Rev.A1
I = 2A
1.2
D
25
1.4
10