ZXMN6A08KTC Diodes Zetex, ZXMN6A08KTC Datasheet - Page 4

• Manufacturer Part Number: ZXMN6A08KTC
• Description: MOSFET N-CH 60V 5.36A DPAK
• Manufacturer: Diodes Zetex

Specifications of ZXMN6A08KTC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5.36A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 5.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 459pF @ 40V
• Power - Max: 2.12W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN6A08KTCTR

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
Forward Transconductance (Notes 7 & 8)
Diode Forward Voltage (Note 7)
Reverse recovery time (Note 8)
Reverse recovery charge (Note 8)
DYNAMIC CHARACTERISTICS (
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Notes:
ZXMN6A08K
Document Revision: 2
7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
Characteristic
Note 8
@T
)
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
V
C
C
GS(th)
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
Q
g
t
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
g
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Min
4 of 8
1.0
60
⎯
⎯
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⎯
⎯
⎯
⎯
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⎯
⎯
⎯
⎯
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⎯
0.88
19.2
30.3
44.2
24.1
12.3
Typ
459
6.6
3.8
5.8
1.4
1.9
2.6
2.1
4.6
⎯
⎯
⎯
⎯
⎯
0.080
0.150
±100
Max
0.95
0.5
3.0
⎯
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Diodes Incorporated
A Product Line of
Unit
μA
nA
nC
nC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
I
I
V
f= 1MHz
V
V
V
I
D
D
S
S
D
DS
GS
GS
GS
DS
DS
GS
GS
DD
= 250μA, V
= 4.0A, V
= 1.4A, di/dt= 100A/μs
= 1.5A, R
= 250μA, V
= 60V, V
= 15V, I
= 40V, V
= 30V, V
= ±20V, V
= 10V, I
= 4.5V, I
= 4.5V
= 10V
Test Condition
GS
G
D
D
D
ZXMN6A08K
GS
GS
GS
= 4.8A
= 4.8A
DS
≅ 6.0Ω
GS
= 4.2A
= 0V
DS
= 0V
= 0V
= 10V
= V
= 0V
= 0V
V
I
© Diodes Incorporated
D
GS
DS
= 1.4A
= 30V
July 2009