ZXMN6A08KTC Diodes Zetex, ZXMN6A08KTC Datasheet - Page 5

• Manufacturer Part Number: ZXMN6A08KTC
• Description: MOSFET N-CH 60V 5.36A DPAK
• Manufacturer: Diodes Zetex

Specifications of ZXMN6A08KTC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5.36A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 5.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 459pF @ 40V
• Power - Max: 2.12W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN6A08KTCTR

Typical Characteristics
ZXMN6A08K
Document Revision: 2
0.01
Typical Transfer Characteristics
0.1
0.1
0.1
10
10
On-Resistance v Drain Current
1
1
1
0.1
T = 25°C
T = 25°C
0.1
T = 150°C
2
V
V
DS
GS
3V
Output Characteristics
Drain-Source Voltage (V)
Gate-Source Voltage (V)
I
D
Drain Current (A)
10V
3
1
1
3.5V
T = 25°C
5V
4
4V
V
DS
= 10V
4.5V
10
10
5V
5
7V
V
V
3V
4.5V
3.5V
4V
10V
GS
www.diodes.com
GS
5 of 8
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
0.01
0.01
0.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
10
10
1
1
-50
0.2
T = 150°C
0.1
V
V
Tj Junction Temperature (°C)
T = 150°C
0.4
DS
SD
Output Characteristics
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
Diodes Incorporated
0.6
A Product Line of
1
V
I
50
D
GS
0.8
= 4.8A
V
I
D
= 10V
GS
= 250uA
= V
T = 25°C
DS
10V
1.0
100
10
ZXMN6A08K
R
V
5V
DS(on)
GS(th)
1.2
2.5V
V
3V
4V
3.5V
2V
GS
© Diodes Incorporated
150
July 2009