FDS8433A Fairchild Semiconductor, FDS8433A Datasheet - Page 2

• Manufacturer Part Number: FDS8433A
• Description: MOSFET P-CH 20V 5A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of FDS8433A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 5V
• Input Capacitance (ciss) @ Vds: 1130pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.047 Ohms
• Forward Transconductance Gfs (max / Min): 16 S
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 47mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -600mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8433ATR

DMOS Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
V
Notes:
1: R
BV
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
2: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
FS
GS(th)
V
SD
DS(on)
iss
oss
rss
g
gs
gd
drain pins. R
Scale 1 : 1 on letter size paper
GS(th)
DSS
T
T
DSS
JA
J
J
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
JC
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
is guaranteed by design while R
Parameter
(Note 2)
a) 50 C/W when
mounted on a 1 in
pad of 2 oz. copper.
(Note 2)
CA
is determined by the user's board design.
2
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= -250 A, Referenced to 25 C
= -250 A, Referenced to 25 C
= 0 V, I
= -16 V, V
= 8 V, V
= -8 V, V
= V
= -4.5 V, I
= -4.5 V, I
= -2.5 V, I
= -4.5 V, V
= -5 V, I
= -10 V, V
= -10 V, I
= -4.5 V, R
= -5 V, I
= -5 V,
= 0 V, I
T
A
Test Conditions
= 25°C unless otherwise noted
GS
, I
b) 105 C/W when
D
D
S
D
D
DS
mounted on a 0.04 in
pad of 2 oz. copper.
DS
= -2.1 A
= -250 A
= -250 A
D
= -5 A
= -5 A,
D
D
D
GS
GS
= 0 V
DS
= -1 A,
GEN
= 0 V
= -5 A
= -5 A, T
= -4.3 A
= 0 V
= 0 V,
= -5 V
= 6
(Note 2)
J
=125 C
2
Min Typ Max Units
-0.4
-20
-25
0.036
0.050
0.047
1130
-0.6
480
120
260
-0.8
-25
2.8
3.2
16
23
90
20
4
8
c) 125 C/W on a minimum
mounting pad of 2 oz. copper.
0.047
0.085
0.070
-100
100
360
125
-2.1
-1.2
16
37
28
-1
-1
FDS8433A Rev. C
mV/ C
mV/ C
nA
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
A
S
A
V
A