FDS8433A Fairchild Semiconductor, FDS8433A Datasheet - Page 4

• Manufacturer Part Number: FDS8433A
• Description: MOSFET P-CH 20V 5A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of FDS8433A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 5V
• Input Capacitance (ciss) @ Vds: 1130pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.047 Ohms
• Forward Transconductance Gfs (max / Min): 16 S
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 47mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -600mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8433ATR

Typical Characteristics
0.01
5
4
3
2
1
0
100
0.1
10
0
1
Figure 9. Maximum Safe Operating Area.
0.1
Figure 7. Gate-Charge Characteristics.
I
D
=-5.0A
R
SINGLE PULSE
0.2
0.005
0.002
0.001
V
JA
T
0.05
0.02
0.01
GS
0.5
0.2
0.1
A
0.0001
1
= 125°C/W
4
= 25°C
= -4.5V
-V
D = 0.5
0.5
DS
Q
0.2
, DRAIN-SOURCE VOLTAGE (V)
g
0.1
, GATE CHARGE (nC)
1
0.05
8
0.02
0.001
0.01
2
Single Pulse
Figure 11. Transient Thermal Response Curve.
12
5
V
(continued)
DS
= -5V
10
0.01
Transient themal response will change depending on the circuit board design.
Thermal characterization performed using the conditions described in Note 1.
16
-15V
20
-10V
50
20
0.1
t , TIME (sec)
1
50
40
30
20
10
3000
2000
1000
0.001
0
500
200
100
50
0.1
Figure 8. Capacitance Characteristics.
f = 1 MHz
V
1
Figure 10. Single Pulse Maximum
GS
0.2
= 0 V
0.01
-V
Power Dissipation.
DS
SINGLE PULSE TIME (SEC)
, DRAIN TO SOURCE VOLTAGE (V)
0.5
0.1
P(pk)
10
R
T - T = P * R
Duty Cycle, D = t /t
J
R
JA
1
t
JA
1
A
(t) = r(t) * R
t
2
= 125 °C/W
1
2
JA
100
1
(t)
JA
2
SINGLE PULSE
R
10
JA
T = 25°C
5
A
=125°C/W
300
10
FDS8433A Rev. C
100
C rss
C oss
C iss
300
20