ZXMN2B03E6TA Diodes Zetex, ZXMN2B03E6TA Datasheet

IC MOSFET N-CHAN 20V SOT23-6

ZXMN2B03E6TA

Manufacturer Part Number
ZXMN2B03E6TA
Description
IC MOSFET N-CHAN 20V SOT23-6
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN2B03E6TA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 4.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
14.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
1160pF @ 10V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN2B03E6TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN2B03E6TA
Manufacturer:
ZETEX
Quantity:
36 000
Part Number:
ZXMN2B03E6TA
Manufacturer:
ZETEX
Quantity:
20 000
Company:
Part Number:
ZXMN2B03E6TA
Quantity:
18 000
Company:
Part Number:
ZXMN2B03E6TA
Quantity:
18 000
ZXMN2B03E6
20V SOT23-6 N-channel enhancement mode MOSFET
with low gate drive capability
Summary
Description
This new generation trench MOSFET from Zetex features low on-
resistance achievable with low gate drive.
Features
Applications
Ordering information
Device marking
2B3
Issue 1 - September 2006
© Zetex Semiconductors plc 2006
V
Device
ZXMN2B03E6TA
(BR)DSS
Low on-resistance
Fast switching speed
Low gate drive capability
SOT23-6 package
DC-DC converters
Power management functions
Disconnect switches
Motor control
20
0.040 @ V
0.055 @ V
0.075 @ V
R
DS(on)
Reel size
(inches)
GS
GS
GS
7
( )
= 4.5V
= 2.5V
= 1.8V
Tape width
(mm)
8
I
D
5.4
4.6
4.0
(A)
1
Quantity per reel
3,000
G
D
D
Top view
www.zetex.com
G
S
D
D
D
S

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ZXMN2B03E6TA Summary of contents

Page 1

... SOT23-6 package Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMN2B03E6TA 7 Device marking 2B3 Issue 1 - September 2006 © Zetex Semiconductors plc 2006 I ( 4.5V 5.4 = 2.5V 4.6 = 1.8V 4.0 ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor Power dissipation at T =25°C amb ...

Page 3

Thermal characteristics Issue 1 - September 2006 © Zetex Semiconductors plc 2006 ZXMN2B03E6 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-source breakdown voltage V Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*) (‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) ...

Page 5

Typical characteristics Issue 1 - September 2006 © Zetex Semiconductors plc 2006 ZXMN2B03E6 5 www.zetex.com ...

Page 6

Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 1 - September 2006 © Zetex Semiconductors plc 2006 ...

Page 7

Issue 1 - September 2006 © Zetex Semiconductors plc 2006 Intentionally left blank 7 ZXMN2B03E6 www.zetex.com ...

Page 8

Package outline - SOT23-6 DIM Min. A 0.90 A1 0.00 A2 0.90 b 0.35 C 0.09 D 2.70 E 2.20 E1 1. 0° Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches ...

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