ZXMN2B03E6TA Diodes Zetex, ZXMN2B03E6TA Datasheet - Page 2

• Manufacturer Part Number: ZXMN2B03E6TA
• Description: IC MOSFET N-CHAN 20V SOT23-6
• Manufacturer: Diodes Zetex

Specifications of ZXMN2B03E6TA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1160pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN2B03E6TR

Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction
Issue 1 - September 2006
© Zetex Semiconductors plc 2006
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
conditions.
temperature.
(a)
(b)
(c)
amb
amb
=25°C
=25°C
@ V
@ V
@ V
GS
GS
GS
(a)
(b)
= 4.5V; T
= 4.5V; T
= 4.5V; T
(c)
(b)
amb
amb
amb
=25°C
=70°C
=25°C
2
5 sec.
(b)
(b)
(a)
Symbol
Symbol
T
V
R
R
V
j
I
I
, T
P
P
DM
DSS
SM
I
I
GS
D
S
D
D
JA
JA
stg
ZXMN2B03E6
-55 to +150
Limit
Limit
13.7
113
± 8
5.4
4.3
4.3
2.8
1.1
8.8
1.7
20
26
26
73
www.zetex.com
mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
°C
W
W
A
A
A
A
V
V