FDS6680A Fairchild Semiconductor, FDS6680A Datasheet
FDS6680A
Manufacturer Part Number
FDS6680A
Description
MOSFET N-CH 30V 12.5A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6680A.pdf
(5 pages)
Specifications of FDS6680A
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.5 mOhm @ 12.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 5V
Input Capacitance (ciss) @ Vds
1620pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0095 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
64 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12.5 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Dc
08+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6680ATR
Available stocks
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Price
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FSC
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Part Number:
FDS6680ACT
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FAIRCHILD/仙童
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20 000
Part Number:
FDS6680AS-NL
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FAIRCHILD/仙童
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20 000
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FDS6680A_NL
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FAIRCHILD/仙童
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20 000
FDS6680A
Single N-Channel, Logic Level, PowerTrench
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced Power
Trench process that has been especially tailored to
minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
©2004 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
DSS
GSS
D
J
θJA
θJC
, T
Device Marking
STG
FDS6680A
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
D
D
Pin 1
D
D
SO-8
D
D
– Continuous
– Pulsed
D
FDS6680A
D
Device
Parameter
S
S
S
S
S
S
G
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1)
Features
• 12.5 A, 30 V
• Ultra-low gate charge
• High performance trench technology for extremely
• High power and current handling capability
low R
®
DS(ON)
MOSFET
5
6
7
8
Tape width
R
R
DS(ON)
DS(ON)
–55 to +150
12mm
Ratings
12.5
±20
2.5
1.2
1.0
30
50
50
25
= 9.5 mΩ @ V
= 13 mΩ @ V
November 2004
4
3
2
1
GS
GS
FDS6680A Rev F1(W)
= 4.5 V
2500 units
= 10 V
Quantity
Units
°C/W
°C
W
V
A
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Datasheet:
FDS6680A Summary of contents
Page 1
... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ November 2004 R = 9.5 mΩ DS(ON mΩ 4.5 V DS(ON Ratings Units 30 V ±20 12 2.5 W 1.2 1.0 °C –55 to +150 °C Tape width Quantity 12mm 2500 units FDS6680A Rev F1(W) ...
Page 2
... Min Typ Max Units mV/°C µA 1 µA 10 ±100 –4.9 mV/°C 7.8 9.5 mΩ 9 1620 pF 380 pF 160 pF Ω 1 5.8 nC 2.1 A 0.73 1 125°C/W when mounted on a minimum pad. FDS6680A Rev F1(W) ...
Page 3
... C 0.01 0.001 0.0001 0 0.2 3 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 6. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0.8 1 1.2 , BODY DIODE FORWARD VOLTAGE (V) SD FDS6680A Rev F1(W) ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 125 C/W θ 0.01 0 TIME (sec) 1 Power Dissipation. R ( θJA θ 125 C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDS6680A Rev F1(W) 30 100 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...