FDS6680A Fairchild Semiconductor, FDS6680A Datasheet - Page 3
![MOSFET N-CH 30V 12.5A 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS6680A
Manufacturer Part Number
FDS6680A
Description
MOSFET N-CH 30V 12.5A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6680A.pdf
(5 pages)
Specifications of FDS6680A
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.5 mOhm @ 12.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 5V
Input Capacitance (ciss) @ Vds
1620pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0095 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
64 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12.5 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Dc
08+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6680ATR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6680A
Manufacturer:
FSC
Quantity:
10 000
Company:
Part Number:
FDS6680A
Manufacturer:
FAIRCHILD
Quantity:
306
Company:
Part Number:
FDS6680A
Manufacturer:
FSC
Quantity:
1 452
Part Number:
FDS6680A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6680A-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6680ACT
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6680AS-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6680A_NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
50
40
30
20
10
1.6
1.4
1.2
0.8
0.6
50
40
30
20
10
0
BFigure 3. On-Resistance Variation with
0
1
1.5
-50
0
Figure 1. On-Region Characteristics.
V
Figure 5. Transfer Characteristics.
V
GS
DS
I
V
D
6.0V
GS
= 10V
= 5V
= 12.5A
-25
= 10V
2
V
V
0.5
GS
DS
T
0
J
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
4.5V
Temperature.
25
2.5
4.0V
T
A
= 125
50
1
o
C
3
3.5V
75
25
1.5
100
o
C)
o
C
-55
3.0V
3.5
o
C
125
150
2
4
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.025
0.015
0.005
0.001
0.03
0.02
0.01
0.01
2.2
1.8
1.6
1.4
1.2
0.8
100
0.1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
10
with Source Current and Temperature.
2
1
1
0
2
0
V
Drain Current and Gate Voltage.
V
GS
GS
T
= 3.5V
= 0V
A
= 25
Gate-to-Source Voltage.
0.2
V
4.0V
10
SD
o
C
V
, BODY DIODE FORWARD VOLTAGE (V)
GS
4
, GATE TO SOURCE VOLTAGE (V)
T
A
4.5V
T
= 125
I
0.4
D
A
, DRAIN CURRENT (A)
= 125
20
o
C
o
C
5.0V
0.6
6
25
o
C
30
6.0V
0.8
-55
8
o
C
10V
40
FDS6680A Rev F1(W)
I
1
D
= 6.2A
50
10
1.2