FDD6635 Fairchild Semiconductor, FDD6635 Datasheet - Page 4

MOSFET N-CH 35V 15A DPAK

FDD6635

Manufacturer Part Number
FDD6635
Description
MOSFET N-CH 35V 15A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD6635

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
35V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 20V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.01 Ohms
Drain-source Breakdown Voltage
35 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
59 A
Power Dissipation
55 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD6635TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD6635
Manufacturer:
FAIRCHILD
Quantity:
35 000
Part Number:
FDD6635
Manufacturer:
FAIRCHILD
Quantity:
8 200
Typical Characteristics
FDD6635 Rev. C2(W)
1.8
1.6
1.4
1.2
0.8
0.6
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
Figure 3. On-Resistance Variation with
1
0
0
-50
1.5
Figure 1. On-Region Characteristics
0
Figure 5. Transfer Characteristics
V
DS
V
V
I
GS
6.0V
GS
D
= 5V
-25
=10V
= 15A
= 10V
0.5
2
V
T
0
V
GS
J
DS
, JUNCTION TEMPERATURE (
Temperature
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
2.5
1
25
4.5V
4.0V
1.5
50
3
T
A
=-55
75
o
3.5
C
2
3.5V
o
100
125
C)
o
C
2.5
4
125
3.0V
25
o
C
150
4.5
3
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.029
0.025
0.021
0.017
0.013
0.009
0.005
0.01
100
0.1
10
2.4
2.2
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
1
2
1
with Source Current and Temperature
2
0
0
V
T
Drain Current and Gate Voltage
GS
A
V
GS
= 25
= 0V
10
= 3.5V
Gate-to-Source Voltage
0.2
o
V
C
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
4.0V
20
GS
4
, GATE TO SOURCE VOLTAGE (V)
T
A
4.5V
T
0.4
= 125
I
A
D
, DRAIN CURRENT (A)
= 125
30
5.0V
o
C
o
C
0.6
40
6
6.0V
25
o
C
50
0.8
10V
-55
www.fairchildsemi.com
o
60
8
C
I
1
D
= 7.5A
70
1.2
10
80

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