ZVP4525ZTA Diodes Zetex, ZVP4525ZTA Datasheet - Page 2

• Manufacturer Part Number: ZVP4525ZTA
• Description: MOSFET P-CH 250V 200MA SOT-89
• Manufacturer: Diodes Zetex

Specifications of ZVP4525ZTA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 205mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 3.45nC @ 10V
• Input Capacitance (ciss) @ Vds: 73pF @ 25V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZVP4525ZTR

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
ZVP4525Z
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V GS =10V; TA=25°C)(a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T A =25°C (a)
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
S E M I C O N D U C T O R S
(V GS =10V; TA=70°C)(a)
SYMBOL
R θJA
R θJA
2
SYMBOL
V DSS
V GS
I D
I D
I DM
I S
I SM
P D
T j
:
T stg
VALUE
103
50
LIMIT
250
±40
-205
-164
-1
-0.75
-1
1.2
9.6
-55 to +150
ISSUE 2 - JUNE 2007
UNIT
°C/W
°C/W
UNIT
V
V
mA
mA
A
A
A
W
mW/°C
°C