ZVP4525ZTA Diodes Zetex, ZVP4525ZTA Datasheet - Page 4

• Manufacturer Part Number: ZVP4525ZTA
• Description: MOSFET P-CH 250V 200MA SOT-89
• Manufacturer: Diodes Zetex

Specifications of ZVP4525ZTA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 205mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 3.45nC @ 10V
• Input Capacitance (ciss) @ Vds: 73pF @ 25V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZVP4525ZTR

ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300μs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZVP4525Z
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
S E M I C O N D U C T O R S
SYMBOL MIN.
V (BR)DSS -250
I DSS
I GSS
V GS(th)
R DS(on)
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
V SD
t rr
Q rr
-0.8
80
amb
= 25°C unless otherwise stated)
TYP.
-285
-30
±1
-1.5
10
13
200
73
12.8
3.91
1.53
3.78
17.5
7.85
2.45
0.22
0.45
205
21
MAX. UNIT CONDITIONS.
-500
±100
-2.0
14
18
3.45
0.31
0.63
0.97
290
29
V
nA
nA
V
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
I D =-1mA, V GS =0V
V DS =-250V, V GS =0V
I
V GS =-10V,
I D =-200mA
V GS =-3.5V,
I D =-100mA
V DS =-10V,I D =-0.15A
V DS =-25 V, V GS =0V,
f=1MHz
V DS =-25V,V GS =-10V,
I
test circuit)
T j =25°C, I S =-200mA,
V GS =0V
T j =25°C, I F =-200mA,
di/dt=100A/μs
V DD =-30V, I D =-200m
A
R G =50Ω, V GS =-10V
(refer to test circuit)
V GS =±40V, V DS =0V
D
D
=-200mA(refer to
=-1mA, V DS = V GS
ISSUE 2 - JUNE 2007