SI5435BDC-T1-GE3 Vishay, SI5435BDC-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI5435BDC-T1-GE3
• Description: MOSFET P-CH 30V 4.3A 1206-8
• Manufacturer: Vishay

Specifications of SI5435BDC-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Single Hex Drain
• Resistance Drain-source Rds (on): 0.045 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -5.9A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5435BDC-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73137
S09-0129-Rev. B, 02-Feb-09
0.20
0.16
0.12
0.08
0.04
0.00
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
V
D
DS
Source-Drain Diode Forward Voltage
GS
= 4.3 A
0.2
On-Resistance vs. Drain Current
5
= 15 V
3
= 4.5 V
V
SD
0.4
Q
- Source-to-Drain Voltage (V)
g
10
I
D
6
- Total Gate Charge (nC)
T
- Drain Current (A)
J
Gate Charge
= 150 °C
0.6
15
9
0.8
T
20
12
J
= 25 °C
1.0
V
GS
25
15
= 10 V
1.2
30
18
1.4
1000
0.20
0.16
0.12
0.08
0.04
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
C
V
I
rss
D
- 25
GS
= 4.3 A
C
5
= 4.5 V
oss
2
V
V
T
DS
GS
0
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
10
25
Capacitance
4
15
50
I
Vishay Siliconix
D
= 4.3 A
C
Si5435BDC
iss
6
75
20
www.vishay.com
100
8
25
125
150
30
10
3