SI5435BDC-T1-GE3 Vishay, SI5435BDC-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI5435BDC-T1-GE3
• Description: MOSFET P-CH 30V 4.3A 1206-8
• Manufacturer: Vishay

Specifications of SI5435BDC-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Single Hex Drain
• Resistance Drain-source Rds (on): 0.045 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -5.9A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5435BDC-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73137.
Document Number: 73137
S09-0129-Rev. B, 02-Feb-09
0.01
0.1
2
1
10
-4
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si5435BDC
www.vishay.com
10
5