SI7413DN-T1-E3 Vishay, SI7413DN-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7413DN-T1-E3
• Description: MOSFET P-CH 20V 8.4A 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7413DN-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 13.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8.4A
• Vgs(th) (max) @ Id: 1V @ 400µA
• Gate Charge (qg) @ Vgs: 51nC @ 4.5V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -13.2A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 29mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7413DN-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72616
S-83051-Rev. C, 29-Dec-08
0.05
0.04
0.03
0.02
0.01
0.00
30
10
5
4
3
2
1
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
5
V
DS
On-Resistance vs. Drain Current
0.2
GS
= 13.2 A
5
= 10 V
= 1.8 V
V
10
SD
Q
g
- Source-to-Drain Voltage (V)
10
I
0.4
- Total Gate Charge (nC)
D
- Drain Current (A)
15
Gate Charge
T
J
= 150 °C
15
20
0.6
25
20
0.8
T
J
V
V
30
= 25 °C
GS
GS
= 2.5 V
= 4.5 V
25
1.0
35
30
40
1.2
5000
4000
3000
2000
1000
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
I
On-Resistance vs. Junction Temperature
D
C
rss
= 3.5 A
- 25
V
I
D
GS
= 13.2 A
V
1
4
V
= 4.5 V
GS
DS
T
0
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
Capacitance
25
2
8
I
C
D
C
oss
= 13.2 A
50
Vishay Siliconix
iss
12
3
75
Si7413DN
www.vishay.com
100
16
4
125
150
20
5
3