SI7413DN-T1-E3 Vishay, SI7413DN-T1-E3 Datasheet - Page 5
![MOSFET P-CH 20V 8.4A 1212-8](/photos/5/42/54273/pkg_5882_sml.jpg)
SI7413DN-T1-E3
Manufacturer Part Number
SI7413DN-T1-E3
Description
MOSFET P-CH 20V 8.4A 1212-8
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI7413DN-T1-E3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 13.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
8.4A
Vgs(th) (max) @ Id
1V @ 400µA
Gate Charge (qg) @ Vgs
51nC @ 4.5V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Transistor Polarity
P Channel
Continuous Drain Current Id
-13.2A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
29mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7413DN-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7413DN-T1-E3
Manufacturer:
NS
Quantity:
220
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72616.
Document Number: 72616
S-83051-Rev. C, 29-Dec-08
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
Square Wave Pulse Duration (s)
10
-2
10
-1
Vishay Siliconix
Si7413DN
www.vishay.com
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