NDS8434 Fairchild Semiconductor, NDS8434 Datasheet

MOSFET P-CH 20V 6.5A 8-SOIC

NDS8434

Manufacturer Part Number
NDS8434
Description
MOSFET P-CH 20V 6.5A 8-SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS8434

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 6.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 4.5V
Input Capacitance (ciss) @ Vds
2330pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS8434TR

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___________________________________________________________________________________________
Absolute Maximum Ratings
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
© 1997 Fairchild Semiconductor Corporation
D
J
DSS
GSS
D
NDS8434
Single P-Channel Enhancement Mode Field Effect Transistor
General Description
,T
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
(Note 1a)
Features
-6.5A, -20V. R
High density cell design for extremely low R
High power and current handling capability in a widely used
surface mount package.
8
5
6
7
R
DS(ON)
DS(ON)
NDS8434
-55 to 150
= 0.05
-6.5
= 0.035
-20
-20
2.5
1.2
50
25
-8
1
@ V
@ V
GS
4
3
2
1
GS
= -2.7V.
= -4.5V
DS(ON).
June 1996
NDS8434 Rev. A3
Units
°C/W
°C/W
W
°C
V
V
A

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NDS8434 Summary of contents

Page 1

... High power and current handling capability in a widely used surface mount package 25°C unless otherwise noted (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) June 1996 = 0.035 @ V = -4.5V DS(ON 0. -2.7V. DS(ON) GS DS(ON NDS8434 -20 -8 -6.5 -20 2.5 1.2 1 -55 to 150 50 25 NDS8434 Rev. A3 Units °C °C/W °C/W ...

Page 2

... 125 -4 -6 125 - 1.0 MHz -4 GEN GEN -6 -4 Min Typ Max Units - µ -10 µA 100 nA -100 nA -0.4 -0 -0.3 -0.45 -0.8 0.026 0.035 o C 0.037 0.07 0.036 0.05 - 2330 pF 1070 pF 360 169 300 ns 63 120 5 NDS8434 Rev. A3 ...

Page 3

... C/W when mounted pad of 2oz copper. c. 125 o C/W when mounted on a 0.006 in 2 pad of 2oz copper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions -2.1 A (Note Min Typ Max Units -2.1 -0.8 -1.2 is guaranteed NDS8434 Rev ...

Page 4

... Figure 6. Gate Threshold Variation -2.5 -2.7 -3.0 -3.5 -4.5 -5 -10 -15 -20 - DRAIN CURRENT ( 125°C J 25°C -55°C -5 -10 -15 - DRAIN CURRENT ( -250µ 100 125 150 T , JUNCTION TEMPERATURE (°C) J with Temperature. NDS8434 Rev. A3 -25 ...

Page 5

... Figure 10. Gate Charge Characteristics. t d(on OUT Figure 12. Switching Waveforms 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD with Source Current and Temperature -5.0V DS -15V -10V GATE CHARGE (nC off t t d(off PULSE W IDTH NDS8434 Rev INVERTED ...

Page 6

... See Note 1c 0. Still Air 0.01 0.8 1 0.1 0 Figure 16. Maximum Safe Operating Area TIME (sec 4.5"x5" FR-4 Board Still Air 0.2 0.4 0.6 0.8 2 2oz COPPER MOUNTING PAD AREA ( -4.5V = 25°C 0 DRAIN-SOURCE VOLTAGE ( ( See Note 1c JA P(pk ( Duty Cycle NDS8434 Rev ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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