NDS8434 Fairchild Semiconductor, NDS8434 Datasheet - Page 5

• Manufacturer Part Number: NDS8434
• Description: MOSFET P-CH 20V 6.5A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS8434

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2330pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS8434TR

Typical Electrical Characteristics
V
GS
5 5 0 0
4 0 0 0
2 0 0 0
1 0 0 0
8 0 0
5 0 0
3 0 0
2 0 0
1.08
1.06
1.04
1.02
0.98
0.96
0.94
Figure 9. Capacitance Characteristics.
0.1
1
-50
Figure 11. Switching Test Circuit.
I
D
= -250µA
R
Figure 7. Breakdown Voltage
-25
0.2
f = 1 MHz
V
Variation with Temperature.
GEN
GS
= 0 V
-V
T
DS
0
J
V
0.5
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
IN
G
2 5
1
5 0
-V
D
S
2
DD
7 5
R
L
1 0 0
D U T
5
(continued)
1 2 5
C iss
1 0
C oss
V
C rss
O U T
1 5 0
2 0
V
Figure 8. Body Diode Forward Voltage Variation
V
t
0.0001
OUT
0.001
d(on)
0.01
IN
5
4
3
2
1
0
0.1
25
10
0
Figure 10. Gate Charge Characteristics.
1
1 0 %
0
I
D
Figure 12. Switching Waveforms.
= -6.5A
V
GS
0.2
-V
= 0V
t
1 0
o n
5 0 %
SD
1 0 %
, BODY DIODE FORWARD VOLTAGE (V)
T = 125°C
J
0.4
t
9 0 %
PULSE W IDTH
Q
r
with Source Current and
g
2 0
, GATE CHARGE (nC)
0.6
Temperature.
25°C
t
d(off)
V
DS
0.8
3 0
-55°C
= -5.0V
5 0 %
9 0 %
1
t
1 0 %
off
4 0
9 0 %
NDS8434 Rev. A3
-10V
1.2
-15V
INVERTED
t
f
5 0