FDM3622 Fairchild Semiconductor, FDM3622 Datasheet - Page 2

• Manufacturer Part Number: FDM3622
• Description: MOSFET N-CH 100V 4.4A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDM3622

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 1090pF @ 25V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 2100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDM3622; FDM3622TR

FDM3622 Rev.B
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
BV
I
I
V
r
C
C
C
Rg
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
(a)R
(b)R
GS(th)
SD
iss
oss
rss
g
gs
gd
rr
user's board design.
Symbol
DSS
θJA
θJA
θJA
is determined with the device mounted on a 1 in
= 60°C/W when mounted on a 1 in
= 135°C/W when mounted on a minimum pad of 2 oz copper.
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Static Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
2
pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.
a. 60°C/W when mounted on
a 1 in
T
2
2
J
pad of 2 oz copper
oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
= 25°C unless otherwise noted
V
V
V
V
V
V
V
V
I
V
V
V
f = 1MHz
V
V
V
I
I
D
F
D
GS
GS
GS
GS
DD
GS
GS
DD
DS
GS
GS
GS
DS
DS
= 4.4A, di/dt = 100A/μs
= 250μA, V
= 4.4A
= 10V
= V
= 10V, I
= 6.0V, I
= 10V, I
= 50V, I
= 10V, R
= 50V
= 80V, V
= 25V, V
= 15mV, f = 1MHz
= 0V, I
= 0V, I
= ±20V, V
2
DS
Test Conditions
, I
S
S
D
D
D
D
= 4.4A
= 2.2A
D
GEN
GS
GS
GS
= 4.4A
= 4.4A
= 4.4A , T
DS
= 250μA
= 3.8A
= 0V
= 0V,
= 0V
= 0V
= 24Ω
T
J
= 100°C
J
= 150°C
θJC
is guaranteed by design while R
b. 135°C/W when mounted on a
minimum pad of 2 oz copper
Min
100
2
3.6
3.4
Typ
25
35
26
13
820
125
11
3.1
44
56
92
35
θJA
1.25
±100
Max
108
1090
1.0
250
120
20
40
56
42
17
56
170
is determined by the
www.fairchildsemi.com
60
80
55
1
4
Units
mΩ
nC
nC
nC
nC
μA
nA
ns
ns
ns
ns
ns
pF
pF
pF
V
V
V
V
Ω